All IGBT. STGWT20V60DF Datasheet

 

STGWT20V60DF IGBT. Datasheet pdf. Equivalent


   Type Designator: STGWT20V60DF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 167 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 10 nS
   Coesⓘ - Output Capacitance, typ: 110 pF
   Package: TO3P

 STGWT20V60DF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGWT20V60DF Datasheet (PDF)

 ..1. Size:2085K  st
 stgwt20v60df.pdf

STGWT20V60DF STGWT20V60DF

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTABTAB Maximum junction temperature: TJ = 175 C Very high speed switching series332 Tail-less switching off11 Low saturation voltage: VCE(sat) = 1.8 V (typ.) TO-220 DPAK@ IC = 20 ATAB Tight paramete

 4.1. Size:1613K  st
 stgwt20v60f.pdf

STGWT20V60DF STGWT20V60DF

STGFW20V60F, STGW20V60F, STGWT20V60F600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Very high speed switching series3 Tail-less switching off2 Low saturation voltage: VCE(sat) = 1.8 V (typ.) 1TO-3PF@ IC = 20 ATAB Tight parameters distribution Safe par

 7.1. Size:1293K  st
 stgwt20h60df.pdf

STGWT20V60DF STGWT20V60DF

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure

 7.2. Size:1352K  st
 stgwt20ih125df.pdf

STGWT20V60DF STGWT20V60DF

STGW20IH125DF STGWT20IH125DF1250 V, 20 A IH series trench gate field-stop IGBTDatasheet - production dataFeaturesTAB Designed for soft commutation only Maximum junction temperature: TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 15 A32 Tight parameters distribution312 Safe paralleling1 Very low VF soft recovery co-pa

 7.3. Size:1293K  st
 stgw20h60df stgwt20h60df.pdf

STGWT20V60DF STGWT20V60DF

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure

 7.4. Size:1497K  st
 stgwt20h65fb.pdf

STGWT20V60DF STGWT20V60DF

STGFW20H65FB, STGW20H65FB, STGWT20H65FBTrench gate field-stop IGBT, HB series 650 V, 20 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 20 ATO-3P Tight parameters distribution111 Safe paralleling3 Low th

 7.5. Size:1351K  st
 stgw20ih125df stgwt20ih125df.pdf

STGWT20V60DF STGWT20V60DF

STGW20IH125DF STGWT20IH125DF1250 V, 20 A IH series trench gate field-stop IGBTDatasheet - production dataFeaturesTAB Designed for soft commutation only Maximum junction temperature: TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 15 A32 Tight parameters distribution312 Safe paralleling1 Very low VF soft recovery co-pa

Datasheet: NGTG30N60FWG , STGB20V60DF , STGB20V60F , STGFW20V60F , STGP20V60DF , STGP20V60F , STGW20V60DF , STGW20V60F , IRG4PF50W , STGWT20V60F , F3L50R06W1E3_B11 , KGT15N120NDS , KGF30N60KDA , KGF30N60PA , IRG7PH35UD1-EP , IRG7PH35UD1M , IRG8P25N120KD .

 

 
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