All IGBT. STGWT20V60DF Datasheet

 

STGWT20V60DF Datasheet and Replacement


   Type Designator: STGWT20V60DF
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 167 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 10 nS
   Coesⓘ - Output Capacitance, typ: 110 pF
   Package: TO3P
 

 STGWT20V60DF substitution

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STGWT20V60DF Datasheet (PDF)

 ..1. Size:2085K  st
stgwt20v60df.pdf pdf_icon

STGWT20V60DF

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTABTAB Maximum junction temperature: TJ = 175 C Very high speed switching series332 Tail-less switching off11 Low saturation voltage: VCE(sat) = 1.8 V (typ.) TO-220 DPAK@ IC = 20 ATAB Tight paramete

 4.1. Size:1613K  st
stgwt20v60f.pdf pdf_icon

STGWT20V60DF

STGFW20V60F, STGW20V60F, STGWT20V60F600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Very high speed switching series3 Tail-less switching off2 Low saturation voltage: VCE(sat) = 1.8 V (typ.) 1TO-3PF@ IC = 20 ATAB Tight parameters distribution Safe par

 7.1. Size:1293K  st
stgwt20h60df.pdf pdf_icon

STGWT20V60DF

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure

 7.2. Size:1352K  st
stgwt20ih125df.pdf pdf_icon

STGWT20V60DF

STGW20IH125DF STGWT20IH125DF1250 V, 20 A IH series trench gate field-stop IGBTDatasheet - production dataFeaturesTAB Designed for soft commutation only Maximum junction temperature: TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 15 A32 Tight parameters distribution312 Safe paralleling1 Very low VF soft recovery co-pa

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IXEN60N120 | NGTB50N60FLWG | MIXA10W1200TML | MIXA30W1200TED | NGTB40N120IHRWG | AOK50B60D1 | MII300-12A4

Keywords - STGWT20V60DF transistor datasheet

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