IRG7PH35UD1-EP Specs and Replacement
Type Designator: IRG7PH35UD1-EP
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 179 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Coesⓘ - Output Capacitance, typ: 120 pF
Package: TO247AD
IRG7PH35UD1-EP Substitution - IGBT ⓘ Cross-Reference Search
IRG7PH35UD1-EP datasheet
irg7ph35ud1-ep.pdf
IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching Losses I NOMINAL = 20A Square RBSOA Ultra-Low VF Diode G TJ(max) = 150 C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I... See More ⇒
irg7ph35ud1m.pdf
IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low VCE (ON) trench IGBT Technology VCES = 1200V Low Switching Losses Square RBSOA IC = 25A, TC = 100 C Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity G TJ(max) = 150 C 100% of the Parts Tested for ILM ... See More ⇒
irg7ph35ud1.pdf
IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching Losses I NOMINAL = 20A Square RBSOA Ultra-Low VF Diode G TJ(max) = 150 C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I... See More ⇒
irg7ph35udpbf irg7ph35ud-ep.pdf
PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode T... See More ⇒
Specs: STGW20V60DF , STGW20V60F , STGWT20V60DF , STGWT20V60F , F3L50R06W1E3_B11 , KGT15N120NDS , KGF30N60KDA , KGF30N60PA , IXRH40N120 , IRG7PH35UD1M , IRG8P25N120KD , IGB30N60T , IGW30N60T , IGP30N65F5 , IGP30N65H5 , IKP30N65F5 , IKP30N65H5 .
Keywords - IRG7PH35UD1-EP transistor spec
IRG7PH35UD1-EP cross reference
IRG7PH35UD1-EP equivalent finder
IRG7PH35UD1-EP lookup
IRG7PH35UD1-EP substitution
IRG7PH35UD1-EP replacement
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