NGTB30N60S PDF and Equivalents Search

 

NGTB30N60S Specs and Replacement

Type Designator: NGTB30N60S

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 189 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 32 nS

Coesⓘ - Output Capacitance, typ: 70 pF

Package: TO247

 NGTB30N60S Substitution

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NGTB30N60S datasheet

 ..1. Size:94K  onsemi
 ngtb30n60s.pdf pdf_icon

NGTB30N60S

NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack... See More ⇒

 0.1. Size:94K  onsemi
 ngtb30n60swg.pdf pdf_icon

NGTB30N60S

NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack... See More ⇒

 5.1. Size:181K  onsemi
 ngtb30n60flwg.pdf pdf_icon

NGTB30N60S

NGTB30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology 30 A, 600 V Low Switching Loss R... See More ⇒

 5.2. Size:179K  onsemi
 ngtb30n60ihlwg.pdf pdf_icon

NGTB30N60S

NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the http //onsemi.com device is a ... See More ⇒

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Specs: IRG8P25N120KD , IGB30N60T , IGW30N60T , IGP30N65F5 , IGP30N65H5 , IKP30N65F5 , IKP30N65H5 , IKW30N65H5 , IRG7S313U , NGTB30N60SWG , NGTB20N120IHL , NGTB25N120IHL , IRGP6630D , NGTB20N120L , NGTB20N120LWG , NGTB25N120L , NGTB25N120LWG .

History: TIG111GMH | VS-GP100TS60SFPBF

Keywords - NGTB30N60S transistor spec

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