IRG7PG35U Specs and Replacement
Type Designator: IRG7PG35U
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 210 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 55 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Package: TO247
- IGBT ⓘ Cross-Reference Search
IRG7PG35U datasheet
..1. Size:441K international rectifier
irg7pg35u.pdf 
IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1000V Features Low VCE (ON) trench IGBT technology IC = 35A, TC = 100 C Low switching losses G TJ(MAX) = 175 C Square RBSOA 100% of the parts tested for ILM E VCE(ON) typ. = 1.9V@ IC = 20A Positive VCE (ON) temperature co-efficient n-channel Tight par... See More ⇒
8.1. Size:565K international rectifier
irg7pg42ud.pdf
IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1000V Features Low VCE (ON) trench IGBT technology IC = 45A, TC = 100 C Low switching losses G Square RBSOA TJ(MAX) = 150 C 100% of the parts tested for ILM E VCE(ON) typ. = 1.7V @ IC = 30A Positive VCE (ON) temperature co-efficient n-channel Ultra ... See More ⇒
9.1. Size:299K international rectifier
irg7ph42u-ep.pdf
PD - 96233B IRG7PH42UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH42U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 60A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VC... See More ⇒
9.2. Size:374K international rectifier
irg7ph35u.pdf
PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C I NOMINAL = 20A Square RBSOA 100% of the parts tested for ILM G TJ(max) = 175 C Positive VCE (ON) temperature co-efficient Tight parameter distribution E VCE(on)... See More ⇒
9.3. Size:300K international rectifier
irg7ph35ud1m.pdf
IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low VCE (ON) trench IGBT Technology VCES = 1200V Low Switching Losses Square RBSOA IC = 25A, TC = 100 C Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity G TJ(max) = 150 C 100% of the Parts Tested for ILM ... See More ⇒
9.4. Size:561K international rectifier
irg7ph50k10d.pdf
IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1200V C IC = 50A, TC =100 C tSC 10 s, TJ(max) = 150 C G C E G VCE(ON) typ. = 1.9V @ IC = 35A C E E G n-channel IRG7PH50K10DPbF IRG7PH50K10D EPbF Applications Industrial Motor Drive G C E UPS Gate Collector Emitter So... See More ⇒
9.5. Size:399K international rectifier
irg7ph28ud1.pdf
IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS C VCES = 1200V Features Low VCE (ON) trench IGBT technology IC = 15A, TC = 100 C Low switching losses TJ(MAX) = 150 C G Square RBSOA Ultra-low VF diode VCE(ON) typ. = 1.95V E 1300Vpk repetitiv... See More ⇒
9.6. Size:384K international rectifier
irg7psh50ud.pdf
PD - 97548 IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 50A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode Tight paramete... See More ⇒
9.7. Size:462K international rectifier
irg7ph35udpbf irg7ph35ud-ep.pdf
PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode T... See More ⇒
9.8. Size:361K international rectifier
irg7ph50u-e.pdf
PD - 97549 IRG7PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH50U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 90A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VCE... See More ⇒
9.9. Size:326K international rectifier
irg7ph35ud1.pdf
IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching Losses I NOMINAL = 20A Square RBSOA Ultra-Low VF Diode G TJ(max) = 150 C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I... See More ⇒
9.10. Size:217K international rectifier
irg7p313u.pdf
PD - 96409 IRG7P313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 20A l Optimized for Sustain and Energy Recovery 1.35 V circuits in PDP applications IRP max @ TC= 25 C 200 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Le... See More ⇒
9.11. Size:435K international rectifier
irg7ph42ud-ep.pdf
PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diod... See More ⇒
9.12. Size:189K international rectifier
irg7pc28u.pdf
PD - 97723 PDP TRENCH IGBT IRG7PC28UPbF Key Parameters Features VCE min 600 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 40A 1.70 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 225 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l ... See More ⇒
9.13. Size:437K international rectifier
irg7ph30k10d.pdf
PD - 97403 IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 1200V Low switching losses 10 S short circuit SOA IC = 16A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G tSC 10 s, TJ(max) = 150 C Positive VCE (ON) Temperature co-efficient Ultra ... See More ⇒
9.14. Size:321K international rectifier
irg7ph30k10.pdf
PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features C Low VCE (ON) Trench IGBT Technology VCES = 1200V Low Switching Losses Maximum Junction Temperature 175 C IC = 23A, TC = 100 C 10 S short Circuit SOA Square RBSOA G tSC 10 s, TJ(max) =175 C 100% of the parts tested for ILM E Positive VCE (ON) Temperature Co-Efficient VC... See More ⇒
9.16. Size:653K international rectifier
irg7ph37k10d.pdf
IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G C G IC = 25A, TC =100 C E tSC 10 s, TJ(max) = 150 C E G C C G G E VCE(ON) typ. = 1.9V @ IC = 15A IRG7PH37K10DPbF IRG7PH37K10D EPbF n-channel TO 247AC TO 247AD Applications G C E Industrial Motor Drive Gate Collecto... See More ⇒
9.17. Size:461K international rectifier
irg7ph35ud.pdf
PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode T... See More ⇒
9.18. Size:539K international rectifier
irg7pk35ud1.pdf
IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1400V C IC = 20A, TC =100 C TJ(max) = 150 C G E E C G C G VCE(ON) typ. = 2.0V @ IC = 20A E IRG7PK35UD1PbF IRG7PK35UD1 EPbF n-channel TO 247AC TO 247AD Applications Induction heating G C E Microwave ovens Gate Colle... See More ⇒
9.19. Size:299K international rectifier
irg7ph42u.pdf
PD - 96233B IRG7PH42UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH42U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 60A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VC... See More ⇒
9.20. Size:894K international rectifier
irg7ph44k10d.pdf
IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100 C tSC 10 s, TJ(max) = 150 C G E C E G C G E VCE(ON) typ. = 1.9V @ IC = 25A IRG7PH44K10DPbF IRG7PH44K10D EPbF n-channel TO 247AC TO 247AD Applications G C E Industrial Motor Drive Gate Collector E... See More ⇒
9.21. Size:374K international rectifier
irg7ph35u-ep.pdf
PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C I NOMINAL = 20A Square RBSOA 100% of the parts tested for ILM G TJ(max) = 175 C Positive VCE (ON) temperature co-efficient Tight parameter distribution E VCE(on)... See More ⇒
9.22. Size:351K international rectifier
irg7ph46ud-e.pdf
IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode Tight parame... See More ⇒
9.23. Size:351K international rectifier
irg7ph46ud.pdf
IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode Tight parame... See More ⇒
9.24. Size:283K international rectifier
irg7ph42ud1m.pdf
IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C Ultra-low VF Diode TJ(max) = 150 C 1300Vpk repetitive transient capacity G 100% of the parts tested for ILM VCE... See More ⇒
9.25. Size:265K international rectifier
irg7pa19u.pdf
PD-96357 PDP TRENCH IGBT IRG7PA19UPbF Features Key Parameters VCE min 360 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.49 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 300 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lea... See More ⇒
9.26. Size:297K international rectifier
irg7ph46u.pdf
PD - 96305A IRG7PH46UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH46U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 75A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VC... See More ⇒
9.27. Size:388K international rectifier
irg7psh73k10.pdf
PD - 97406A IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 1200V Low VCE (ON) Trench IGBT Technology Low Switching Losses IC(Nominal) = 75A Maximum Junction Temperature 175 C 10 S short Circuit SOA G tSC 10 s, TJ(max) =175 C Square RBSOA 100% of The Parts Tested for ILM E VCE(on) typ. = 2.0V Positive VCE (ON) Temperatur... See More ⇒
9.28. Size:326K international rectifier
irg7ph35ud1-ep.pdf
IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching Losses I NOMINAL = 20A Square RBSOA Ultra-Low VF Diode G TJ(max) = 150 C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I... See More ⇒
9.29. Size:435K international rectifier
irg7ph42ud.pdf
PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diod... See More ⇒
9.30. Size:361K international rectifier
irg7ph50u.pdf
PD - 97549 IRG7PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH50U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 90A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VCE... See More ⇒
9.31. Size:764K international rectifier
irg7psh54k10d.pdf
IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 1200V IC = 65A, TC =100 C tSC 10 s, TJ(max) = 150 C E G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel IRG7PSH54K10DPbF Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VC... See More ⇒
9.32. Size:331K international rectifier
irg7ph42ud1.pdf
IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF Diode G 1300Vpk repetitive transient capacity TJ(max) = 150 C 100% of the parts tested for IL... See More ⇒
Specs: 6SI75N12
, IRGB4630D
, IRGP4630D
, IRGS4630D
, CI40T120P
, KGF25N120KDA
, AP40G120W
, F4-25R12NS4
, CRG40T60AN3H
, STGB20H60DF
, STGP20H60DF
, STGW20H60DF
, STGWT20H60DF
, AUIRGP66524D0
, IRG7PH37K10D
, AUIRGP4062D1
, NGTB30N65IHL2
.
Keywords - IRG7PG35U transistor spec
IRG7PG35U cross reference
IRG7PG35U equivalent finder
IRG7PG35U lookup
IRG7PG35U substitution
IRG7PG35U replacement
