All IGBT. AUIRGP4062D1 Datasheet

 

AUIRGP4062D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: AUIRGP4062D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 217 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 55 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.77 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 23 nS
   Coesⓘ - Output Capacitance, typ: 118 pF
   Qgⓘ - Total Gate Charge, typ: 51 nC
   Package: TO247

 AUIRGP4062D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AUIRGP4062D1 Datasheet (PDF)

 ..1. Size:432K  international rectifier
 auirgp4062d1.pdf

AUIRGP4062D1 AUIRGP4062D1

AUIRGP4062D1AUTOMOTIVE GRADE AUIRGP4062D1-EINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. EVCE(on) ty

 3.1. Size:314K  international rectifier
 auirgp4062d.pdf

AUIRGP4062D1 AUIRGP4062D1

PD - 96353AAUIRGP4062DAUIRGP4062D-EINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 24A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtSC 5s, TJ(max) = 175C 5s SCSOA Square RBSOAEVCE(on) typ. = 1.60V 100% of The Parts Tested for ILM Positive VCE (on) Temperature Co

 3.2. Size:621K  international rectifier
 auirgb4062d auirgp4062d auirgp4062d-e.pdf

AUIRGP4062D1 AUIRGP4062D1

PD - 96353AUIRGB4062DAUIRGP4062DAUIRGP4062D-ECINSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600VULTRAFAST SOFT RECOVERY DIODEIC = 24A, TC = 100CFeatures Low VCE (on) Trench IGBT TechnologyGtSC 5s, TJ(max) = 175C Low Switching Losses 5s SCSOAE Square RBSOAVCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V

 3.3. Size:554K  infineon
 auirgp4062d auirgp4062d-e.pdf

AUIRGP4062D1 AUIRGP4062D1

AUIRGP4062D AUIRGP4062D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features CVCES = 600V Low VCE (on) Trench IGBT Technology Low Switching Losses IC = 24A, TC = 100C 5s SCSOA GtSC 5s, TJ(max) = 175C Square RBSOA E 100% of The Parts Tested for ILM V typ. = 1.60V CE(on)n-channel

Datasheet: F4-25R12NS4 , IRG7PG35U , STGB20H60DF , STGP20H60DF , STGW20H60DF , STGWT20H60DF , AUIRGP66524D0 , IRG7PH37K10D , YGW60N65F1A1 , NGTB30N65IHL2 , NGTB30N65IHL2WG , KGT25N135KDH , STGWA30N120KD , KGF40N60PA , NGTB50N60FLWG , NGTB50N60FWG , NGTG50N60FLWG .

 

 
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