NGTB50N60FLWG Datasheet and Replacement
Type Designator: NGTB50N60FLWG
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 223 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 43 nS
Coesⓘ - Output Capacitance, typ: 300 pF
Package: TO247
- IGBT Cross-Reference
NGTB50N60FLWG Datasheet (PDF)
ngtb50n60flwg.pdf

NGTB50N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology50 A, 600 V Low Switching Loss R
ngtb50n60fl2wg.pdf

NGTB50N60FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.ons
ngtb50n60fl2.pdf

NGTB50N60FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.ons
ngtb50n60fwg.pdf

NGTB50N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat50 A, 600 V Low Switching Loss Reduces System Power DissipationV
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: NCE60TD65BP | CM1400DU-24NF | TT050K065FQ | CRG15T120BK3SD | STGB14NC60KDT4 | IRGSL4640DPBF | JNG75T65HYU2
Keywords - NGTB50N60FLWG transistor datasheet
NGTB50N60FLWG cross reference
NGTB50N60FLWG equivalent finder
NGTB50N60FLWG lookup
NGTB50N60FLWG substitution
NGTB50N60FLWG replacement
History: NCE60TD65BP | CM1400DU-24NF | TT050K065FQ | CRG15T120BK3SD | STGB14NC60KDT4 | IRGSL4640DPBF | JNG75T65HYU2



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