All IGBT. NGTB50N60FLWG Datasheet

 

NGTB50N60FLWG IGBT. Datasheet pdf. Equivalent


   Type Designator: NGTB50N60FLWG
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 50N60FL
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 223 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 43 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Qgⓘ - Total Gate Charge, typ: 310 nC
   Package: TO247

 NGTB50N60FLWG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTB50N60FLWG Datasheet (PDF)

 ..1. Size:186K  onsemi
 ngtb50n60flwg.pdf

NGTB50N60FLWG NGTB50N60FLWG

NGTB50N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology50 A, 600 V Low Switching Loss R

 3.1. Size:237K  onsemi
 ngtb50n60fl2wg.pdf

NGTB50N60FLWG NGTB50N60FLWG

NGTB50N60FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.ons

 3.2. Size:237K  onsemi
 ngtb50n60fl2.pdf

NGTB50N60FLWG NGTB50N60FLWG

NGTB50N60FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.ons

 4.1. Size:177K  onsemi
 ngtb50n60fwg.pdf

NGTB50N60FLWG NGTB50N60FLWG

NGTB50N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat50 A, 600 V Low Switching Loss Reduces System Power DissipationV

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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