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NGTB50N60FWG Specs and Replacement


   Type Designator: NGTB50N60FWG
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 50N60F
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 223 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 43 nS
   Coesⓘ - Output Capacitance, typ: 275 pF
   Qg ⓘ - Total Gate Charge, typ: 310 nC
   Package: TO247
 

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NGTB50N60FWG specs

 ..1. Size:177K  onsemi
 ngtb50n60fwg.pdf pdf_icon

NGTB50N60FWG

NGTB50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Optimized for Very Low VCEsat 50 A, 600 V Low Switching Loss Reduces System Power Dissipation V... See More ⇒

 4.1. Size:186K  onsemi
 ngtb50n60flwg.pdf pdf_icon

NGTB50N60FWG

NGTB50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology 50 A, 600 V Low Switching Loss R... See More ⇒

 4.2. Size:237K  onsemi
 ngtb50n60fl2wg.pdf pdf_icon

NGTB50N60FWG

NGTB50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons... See More ⇒

 4.3. Size:237K  onsemi
 ngtb50n60fl2.pdf pdf_icon

NGTB50N60FWG

NGTB50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons... See More ⇒

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Specs: IRG7PH37K10D , AUIRGP4062D1 , NGTB30N65IHL2 , NGTB30N65IHL2WG , KGT25N135KDH , STGWA30N120KD , KGF40N60PA , NGTB50N60FLWG , IRG7IC28U , NGTG50N60FLWG , NGTG50N60FWG , KGF50N60KDA , IKW30N65EL5 , IKW30N65NL5 , IHW40N65R5 , IKW40N65WR5 , NGTB25N120FL .

Keywords - NGTB50N60FWG transistor spec

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