All IGBT. NGTB25N120FL Datasheet

 

NGTB25N120FL Datasheet and Replacement


   Type Designator: NGTB25N120FL
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 192 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 144 pF
   Package: TO247
      - IGBT Cross-Reference

 

NGTB25N120FL Datasheet (PDF)

 ..1. Size:186K  onsemi
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NGTB25N120FL

NGTB25N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 0.1. Size:148K  onsemi
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NGTB25N120FL

NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 0.2. Size:144K  onsemi
ngtb25n120fl2wg.pdf pdf_icon

NGTB25N120FL

NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 0.3. Size:154K  onsemi
ngtb25n120fl3wg.pdf pdf_icon

NGTB25N120FL

NGTB25N120FL3WGIGBT - Ultra Field StopThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: DIM800FSM17-A | IRG7PH37K10D | IXSM40N60A | 6MBP50NA060-01 | APTGF50X120TE3 | STGWA30M65DF2 | FD400R33KF2C

Keywords - NGTB25N120FL transistor datasheet

 NGTB25N120FL cross reference
 NGTB25N120FL equivalent finder
 NGTB25N120FL lookup
 NGTB25N120FL substitution
 NGTB25N120FL replacement

 

 
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