All IGBT. AUIRGS4062D1 Datasheet

 

AUIRGS4062D1 Datasheet and Replacement


   Type Designator: AUIRGS4062D1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 246 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 59 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.77 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 24 nS
   Coesⓘ - Output Capacitance, typ: 118 pF
   Package: TO263
 

 AUIRGS4062D1 substitution

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AUIRGS4062D1 Datasheet (PDF)

 ..1. Size:415K  international rectifier
 auirgs4062d1.pdf pdf_icon

AUIRGS4062D1

AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.

 8.1. Size:305K  international rectifier
 auirgs30b60k.pdf pdf_icon

AUIRGS4062D1

PD - 96334AUTOMOTIVE GRADEAUIRGS30B60KAUIRGSL30B60KINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Low VCE(on) Non Punch Through IGBT TechnologyIC = 50A, TC=100C 10s Short Circuit Capabilityat TJ=175C Square RBSOA Gtsc > 10s, TJ=150C Positive VCE(on) Temperature CoefficientE Maximum Junction Temperature rated at 175CVCE(on) typ.

 8.2. Size:305K  international rectifier
 auirgsl30b60k.pdf pdf_icon

AUIRGS4062D1

PD - 96334AUTOMOTIVE GRADEAUIRGS30B60KAUIRGSL30B60KINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Low VCE(on) Non Punch Through IGBT TechnologyIC = 50A, TC=100C 10s Short Circuit Capabilityat TJ=175C Square RBSOA Gtsc > 10s, TJ=150C Positive VCE(on) Temperature CoefficientE Maximum Junction Temperature rated at 175CVCE(on) typ.

 8.3. Size:415K  international rectifier
 auirgsl4062d1.pdf pdf_icon

AUIRGS4062D1

AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.

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Datasheet: NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF , 20MT120UFP , MMG40HB120H6HN , STGWA40N120KD , RJH1CV5DPK , AUIRGB4062D1 , SGH80N60UFD , AUIRGSL4062D1 , KGF40N60KDA , KGT30N135KDH , KGT30N135NDH , IKD15N60RA , IGW40N65F5A , IGW40N65H5A , IKW40N65F5A .

History: FB30R06W1E3

Keywords - AUIRGS4062D1 transistor datasheet

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