All IGBT. KGT30N135KDH Datasheet

 

KGT30N135KDH IGBT. Datasheet pdf. Equivalent


   Type Designator: KGT30N135KDH
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Qgⓘ - Total Gate Charge, typ: 160 nC
   Package: TO247

 KGT30N135KDH Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

KGT30N135KDH Datasheet (PDF)

 ..1. Size:514K  kec
 kgt30n135kdh.pdf

KGT30N135KDH KGT30N135KDH

SEMICONDUCTORKGT30N135KDHTECHNICAL DATAGeneral DescriptionBKEC NPT IGBTs offer low switching losses, high energy efficiency AOS Kand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.DIM MILLIMETERS_+A 15.90 0.30FEATURES _B5.00 + 0.20High speed switching _C20.85 + 0.30_D3.00 + 0.20High r

 5.1. Size:1596K  kec
 kgt30n135ndh.pdf

KGT30N135KDH KGT30N135KDH

SEMICONDUCTORKGT30N135NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorSoft current turn-off waveformsExtremely enhanced avalanche c

 7.1. Size:584K  kec
 kgt30n120ndh.pdf

KGT30N135KDH KGT30N135KDH

SEMICONDUCTORKGT30N120NDHTECHNICAL DATAGeneral DescriptionAKEC NPT IGBTs offer low switching losses, high energy efficiencyQ BNO Kand high avalanche ruggedness for soft switching application such asDIM MILLIMETERSIH(induction heating), microwave oven, etc._A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20FEATURES +_d +1.00 0.20High speed

 7.2. Size:584K  kec
 kgt30n120nda.pdf

KGT30N135KDH KGT30N135KDH

SEMICONDUCTORKGT30N120NDATECHNICAL DATAGeneral DescriptionAKEC NPT IGBTs offer low switching losses, high energy efficiencyQ BNO Kand high avalanche ruggedness for soft switching application such asDIM MILLIMETERSgeneral inverters, etc._A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20FEATURES +_d +1.00 0.20High speed switching_E3.

Datasheet: 20MT120UFP , MMG40HB120H6HN , STGWA40N120KD , RJH1CV5DPK , AUIRGB4062D1 , AUIRGS4062D1 , AUIRGSL4062D1 , KGF40N60KDA , SGT60N60FD1P7 , KGT30N135NDH , IKD15N60RA , IGW40N65F5A , IGW40N65H5A , IKW40N65F5A , IKW40N65H5A , IRGB4640D , IRGP4062-E .

 

 
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