HGTD7N60B3 IGBT. Datasheet pdf. Equivalent
Type Designator: HGTD7N60B3
Type of IGBT Channel: N-Channel
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Collector Current |Ic|, A: 14
Maximum Junction Temperature (Tj), °C: 150
HGTD7N60B3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
HGTD7N60B3 Datasheet (PDF)
6.1. hgtd7n60c3s hgtp7n60c3.pdf Size:161K _fairchild_semi
HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated • 14A, 600V at TC = 25oC high voltage switching devices combining the best features • 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ =
6.2. hgtd7n60.pdf Size:222K _harris_semi
HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBT June 1996 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = +25oC COLLECTOR EMITTER • 600V Switching SOA Capability GATE • Typical Fall Time - 140ns at TJ = +150oC • Short Circuit Rating • Low Conduction Loss COLLECTOR (FLANGE) Description JEDEC TO-251AA The HGTD7N60C
Datasheet: HGTD3N60C3 , HGTD3N60C3S , HGTD3N60C3S9A , HGTD6N40E1 , HGTD6N40E1S , HGTD6N50E1 , HGTD6N50E1S , HGTD7N60A4S , G7N60C , HGTD7N60B3S , HGTD7N60C3 , HGTD7N60C3S , HGTD7N60C3S9A , HGTD8P50G1 , HGTD8P50G1S , HGTD8P50G1S9A , HGTG10N120BN .



LIST
Last Update
IGBT: MGD622 | GT50N324 | BT60N60ANF | 2PG011 | MBQ40T65FDSC | IGF40T120F | FGPF30N45TTU | FGH40T65SHDF_F155 | IXBT15N170 | IXBH9N160 |