All IGBT. HGTD7N60B3 Datasheet

 

HGTD7N60B3 IGBT. Datasheet pdf. Equivalent

Type Designator: HGTD7N60B3

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Collector Current |Ic|, A: 14

Maximum Junction Temperature (Tj), °C: 150

HGTD7N60B3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTD7N60B3 Datasheet (PDF)

6.1. hgtd7n60c3s hgtp7n60c3.pdf Size:161K _fairchild_semi

HGTD7N60B3 HGTD7N60B3

HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated • 14A, 600V at TC = 25oC high voltage switching devices combining the best features • 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ =

6.2. hgtd7n60.pdf Size:222K _harris_semi

HGTD7N60B3 HGTD7N60B3

HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBT June 1996 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = +25oC COLLECTOR EMITTER • 600V Switching SOA Capability GATE • Typical Fall Time - 140ns at TJ = +150oC • Short Circuit Rating • Low Conduction Loss COLLECTOR (FLANGE) Description JEDEC TO-251AA The HGTD7N60C

 

Datasheet: HGTD3N60C3 , HGTD3N60C3S , HGTD3N60C3S9A , HGTD6N40E1 , HGTD6N40E1S , HGTD6N50E1 , HGTD6N50E1S , HGTD7N60A4S , G7N60C , HGTD7N60B3S , HGTD7N60C3 , HGTD7N60C3S , HGTD7N60C3S9A , HGTD8P50G1 , HGTD8P50G1S , HGTD8P50G1S9A , HGTG10N120BN .

 

 
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