HGTD7N60B3 IGBT. Datasheet pdf. Equivalent
Type Designator: HGTD7N60B3
Type: IGBT
Marking Code: G7N60B
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 14 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 21 nS
Qgⓘ - Total Gate Charge, typ: 23 nC
Package: TO251
HGTD7N60B3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
HGTD7N60B3 Datasheet (PDF)
hgtd7n60c3s hgtp7n60c3.pdf
HGTD7N60C3S, HGTP7N60C3Data Sheet December 200114A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ =
hgtd7n60c3s hgtp7n60c3.pdf
HGTD7N60C3S, HGTP7N60C3Data Sheet December 200114A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ =
hgtd7n60c3s hgtp7n60c3.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
hgtd7n60.pdf
HGTD7N60C3,S E M I C O N D U C T O RHGTD7N60C3S, HGTP7N60C314A, 600V, UFS Series N-Channel IGBTJune 1996Features Packaging JEDEC TO-220AB 14A, 600V at TC = +25oC COLLECTOREMITTER 600V Switching SOA CapabilityGATE Typical Fall Time - 140ns at TJ = +150oC Short Circuit Rating Low Conduction LossCOLLECTOR (FLANGE)DescriptionJEDEC TO-251AAThe HGTD7N60C
Datasheet: HGTD3N60C3 , HGTD3N60C3S , HGT5A27N120BN , HGTD6N40E1 , HGTD6N40E1S , HGTD6N50E1 , HGTD6N50E1S , HGTD7N60A4S , SGH80N60UFD , HGTD7N60B3S , HGTD7N60C3 , HGTD7N60C3S , HGT1S2N120CNS , HGTD8P50G1 , HGTD8P50G1S , HGTD8P50G1S9A , HGTG10N120BN .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2