IKW40N65H5A Datasheet and Replacement
Type Designator: IKW40N65H5A
Type: IGBT + Anti-Parallel Diode
Marking Code: K40EH5A
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 74 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.66 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 11 nS
Coesⓘ - Output Capacitance, typ: 43 pF
Qg ⓘ - Total Gate Charge, typ: 92 nC
Package: TO247
IKW40N65H5A Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKW40N65H5A Datasheet (PDF)
ikw40n65h5a.pdf
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IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKW40N65F5A 650V DuoPack IGBT and diode High speed switching series fifth generation Data sheet Industrial Power Control IKW40N65F5A High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antipar
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