All IGBT. IRGP4062-E Datasheet

 

IRGP4062-E IGBT. Datasheet pdf. Equivalent

Type Designator: IRGP4062-E

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 250

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.6

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 48

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 22

Maximum Collector Capacity (Cc), pF: 129

Package: TO247AD

IRGP4062-E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP4062-E Datasheet (PDF)

0.1. irgp4062-e.pdf Size:253K _international_rectifier

IRGP4062-E
IRGP4062-E

IRGP4062-EPbFINSULATED GATE BIPOLAR TRANSISTORFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 24A, TC = 100C 5 S short circuit SOA Square RBSOAGtSC 5s, TJ(max) = 175C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient EVCE(on) typ. =

6.1. auirgp4062d1.pdf Size:432K _international_rectifier

IRGP4062-E
IRGP4062-E

AUIRGP4062D1AUTOMOTIVE GRADE AUIRGP4062D1-EINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. EVCE(on) ty

6.2. auirgp4062d.pdf Size:314K _international_rectifier

IRGP4062-E
IRGP4062-E

PD - 96353AAUIRGP4062DAUIRGP4062D-EINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 24A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtSC 5s, TJ(max) = 175C 5s SCSOA Square RBSOAEVCE(on) typ. = 1.60V 100% of The Parts Tested for ILM Positive VCE (on) Temperature Co

 6.3. irgp4062d-e.pdf Size:434K _international_rectifier

IRGP4062-E
IRGP4062-E

IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM E

6.4. irgp4062d.pdf Size:434K _international_rectifier

IRGP4062-E
IRGP4062-E

IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM E

Datasheet: KGT30N135KDH , KGT30N135NDH , IKD15N60RA , IGW40N65F5A , IGW40N65H5A , IKW40N65F5A , IKW40N65H5A , IRGB4640D , GT30J322 , IRGP4262D , IRGP4640 , IRGP4640D , IRGP4740D , IRGS4640D , IRGSL4640D , MM25G120B , MMG40A120B7HN .

 

 
Back to Top