All IGBT. IRGP4262D Datasheet

 

IRGP4262D IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGP4262D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 124 pF
   Qgⓘ - Total Gate Charge, typ: 47 nC
   Package: TO247

 IRGP4262D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP4262D Datasheet (PDF)

 ..1. Size:681K  international rectifier
 irgp4262d.pdf

IRGP4262D IRGP4262D

IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V G C G IC = 40A, TC =100C E tSC 5.5s, TJ(max) = 175C E GC C G G EVCE(ON) typ. = 1.7V @ IC = 24A IRGP4262DPbF IRGP4262D-EPbF n-channelTO-247AC TO-247AD Applications G C E Industrial Motor Drive Gate Collector Emitter UPS

 7.1. Size:899K  international rectifier
 irgp4266d.pdf

IRGP4262D IRGP4262D

IRGP4266DPbF IRGP4266D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C GE E C G C G VCE(ON) typ. = 1.7V @ IC = 75A EIRGP4266DPbFIRGP4266DEPbFn-channelApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector E

 7.2. Size:920K  international rectifier
 irgp4263.pdf

IRGP4262D IRGP4262D

IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor CVCES = 650V IC = 60A, TC =100C E E GtSC 5.5s, TJ(max) = 175C C C G G VCE(ON) typ. = 1.7V @ IC = 48A EIRGP4263PbF IRGP4263-EPbF n-channelTO247AC TO-247AD Applications G C E Industrial Motor Drive Gate Collector Emitter Inverters UPS Welding Features Benefi

 7.3. Size:583K  international rectifier
 irgp4266.pdf

IRGP4262D IRGP4262D

IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V CIC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C GE E C VCE(ON) typ. = 1.7V @ IC = 75A G C G EIRGP4266PbF IRGP4266-EPbF n-channelTO-247AC TO-247AD Applications Industrial Motor Drive G C E Inverters Gate Collector Emitter UPS Welding Features Ben

Datasheet: KGT30N135NDH , IKD15N60RA , IGW40N65F5A , IGW40N65H5A , IKW40N65F5A , IKW40N65H5A , IRGB4640D , IRGP4062-E , RJH3047 , IRGP4640 , IRGP4640D , IRGP4740D , IRGS4640D , IRGSL4640D , MM25G120B , MMG40A120B7HN , MMG75HB060H6EN .

 

 
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