HGTD7N60B3S PDF and Equivalents Search

 

HGTD7N60B3S Specs and Replacement

Type Designator: HGTD7N60B3S

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 60 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 14 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 21 nS

Package: TO252

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HGTD7N60B3S datasheet

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HGTD7N60B3S

HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ =... See More ⇒

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Specs: HGTD3N60C3S, HGT5A27N120BN, HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S, HGTD7N60A4S, HGTD7N60B3, SGH80N60UFD, HGTD7N60C3, HGTD7N60C3S, HGT1S2N120CNS, HGTD8P50G1, HGTD8P50G1S, HGTD8P50G1S9A, HGTG10N120BN, HGTG10N120BND

Keywords - HGTD7N60B3S transistor spec

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