All IGBT. IRGSL4640D Datasheet


IRGSL4640D IGBT. Datasheet pdf. Equivalent

Type Designator: IRGSL4640D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 250

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.6

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 65

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 22

Maximum Collector Capacity (Cc), pF: 129

Package: TO262

IRGSL4640D Transistor Equivalent Substitute - IGBT Cross-Reference Search


IRGSL4640D Datasheet (PDF)

0.1. irgsl4640d.pdf Size:809K _international_rectifier


IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100°C E E E E tSC ≥ 5µs, TJ(max) = 175°C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

8.1. irgsl4b60k.pdf Size:299K _international_rectifier


PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. IC = 6.8A, TC=100°C • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G • Maximum Junction Temperature rated at 175°C. tsc > 10µs, TJ=150°C E VCE(on) typ. = 2.1V Benefits

8.2. irgsl4b60kd1.pdf Size:442K _international_rectifier


PD - 94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. IC = 7.6A, TC=100°C • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Positive VCE (on) Temperature Coefficient. E • Maximum Junction Temperature rated

 8.3. auirgsl4062d1.pdf Size:415K _international_rectifier


AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features • Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A • Low Switching Losses • 5μs SCSOA G tSC ≥ 5μs, TJ(max) = 175°C • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient.

8.4. irgsl4062d.pdf Size:460K _international_rectifier


PD - 97355B IRGS4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4062DPbF ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 µS short circuit SOA G • Square RBSOA tSC ≥ 5µs, TJ(max) = 175°C • 100% of the parts tested for 4X rated cur

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .


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