All IGBT. NGTB30N60IHLWG Datasheet

 

NGTB30N60IHLWG IGBT. Datasheet pdf. Equivalent

Type Designator: NGTB30N60IHLWG

Marking Code: 30N60IHL

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 250

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 30

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 30

Maximum Collector Capacity (Cc), pF: 120

Package: TO247

NGTB30N60IHLWG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTB30N60IHLWG Datasheet (PDF)

0.1. ngtb30n60ihlwg.pdf Size:179K _onsemi

NGTB30N60IHLWG
NGTB30N60IHLWG

NGTB30N60IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thehttp://onsemi.comdevice is a

5.1. ngtb30n60fwg.pdf Size:181K _onsemi

NGTB30N60IHLWG
NGTB30N60IHLWG

NGTB30N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat30 A, 600 V Low Switching Loss Reduces System Power DissipationV

5.2. ngtb30n60s.pdf Size:94K _onsemi

NGTB30N60IHLWG
NGTB30N60IHLWG

NGTB30N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack

 5.3. ngtb30n60swg.pdf Size:94K _onsemi

NGTB30N60IHLWG
NGTB30N60IHLWG

NGTB30N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack

5.4. ngtb30n60flwg.pdf Size:181K _onsemi

NGTB30N60IHLWG
NGTB30N60IHLWG

NGTB30N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology30 A, 600 V Low Switching Loss R

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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