NGTB50N60S Datasheet. Specs and Replacement

Type Designator: NGTB50N60S  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 32 nS

Coesⓘ - Output Capacitance, typ: 120 pF

Package: TO247

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NGTB50N60S datasheet

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NGTB50N60S

NGTB50N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack... See More ⇒

 0.1. Size:87K  onsemi
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NGTB50N60S

NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com ... See More ⇒

 0.2. Size:203K  onsemi
 ngtb50n60swg.pdf pdf_icon

NGTB50N60S

NGTB50N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack... See More ⇒

 0.3. Size:87K  onsemi
 ngtb50n60s1.pdf pdf_icon

NGTB50N60S

NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com ... See More ⇒

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Specs: IRGSL4640D, MM25G120B, MMG40A120B7HN, MMG75HB060H6EN, NGTB30N60IHLWG, NGTB40N60IHLWG, NGTB45N60S, NGTB45N60SWG, AOK40B65H2AL, NGTB50N60SWG, IGW40N65H5, IGP40N65F5, IGP40N65H5, IGW40N65F5, IKP40N65F5, IKW40N65F5, NGTB40N60FLWG

Keywords - NGTB50N60S transistor spec

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