NGTB50N60SWG Datasheet and Replacement
Type Designator: NGTB50N60SWG
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 32 nS
Coesⓘ - Output Capacitance, typ: 120 pF
Package: TO247
- IGBT Cross-Reference
NGTB50N60SWG Datasheet (PDF)
ngtb50n60swg.pdf
NGTB50N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack
ngtb50n60s1wg.pdf
NGTB50N60S1WGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com
ngtb50n60s.pdf
NGTB50N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack
ngtb50n60s1.pdf
NGTB50N60S1WGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: AUIRGS30B60K | 7MBP100VDA060-50 | GT20D101Y | KGT30N135NDH | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH
Keywords - NGTB50N60SWG transistor datasheet
NGTB50N60SWG cross reference
NGTB50N60SWG equivalent finder
NGTB50N60SWG lookup
NGTB50N60SWG substitution
NGTB50N60SWG replacement
History: AUIRGS30B60K | 7MBP100VDA060-50 | GT20D101Y | KGT30N135NDH | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH
LIST
Last Update
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
s9013 transistor equivalent | 60n60 mosfet | 2sc2412 | 2sc372 | 2sd400 datasheet | k2645 | tip3055 equivalent | 3sk73