IGP40N65F5 IGBT. Datasheet pdf. Equivalent
Type Designator: IGP40N65F5
Type: IGBT
Marking Code: G40F655
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 255 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 74 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 13 nS
Coesⓘ - Output Capacitance, typ: 40 pF
Qgⓘ - Total Gate Charge, typ: 95 nC
Package: TO220
IGP40N65F5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IGP40N65F5 Datasheet (PDF)
igp40n65f5.pdf
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IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGP40N65F5, IGW40N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP40N65F5, IGW40N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in har
igp40n65h5.pdf
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2