IKP40N65F5 Specs and Replacement
Type Designator: IKP40N65F5
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 255 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 74 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 13 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Package: TO220
IKP40N65F5 Substitution - IGBT ⓘ Cross-Reference Search
IKP40N65F5 datasheet
ikp40n65f5.pdf
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IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode IKP40N65F5, IKW40N65F5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKW40N65F5, IKP40N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID ... See More ⇒
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Specs: NGTB45N60S , NGTB45N60SWG , NGTB50N60S , NGTB50N60SWG , IGW40N65H5 , IGP40N65F5 , IGP40N65H5 , IGW40N65F5 , SGT40N60FD2PT , IKW40N65F5 , NGTB40N60FLWG , STGW15S120DF3 , STGW20IH125DF , STGWA15S120DF3 , STGWT20IH125DF , SML75HB06 , MMG50H120X6TN .
History: IXGH28N30A
Keywords - IKP40N65F5 transistor spec
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History: IXGH28N30A
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