All IGBT. NGTB40N60FLWG Datasheet

 

NGTB40N60FLWG IGBT. Datasheet pdf. Equivalent


   Type Designator: NGTB40N60FLWG
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 257 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 37 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Package: TO247

 NGTB40N60FLWG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTB40N60FLWG Datasheet (PDF)

 ..1. Size:160K  onsemi
 ngtb40n60flwg.pdf

NGTB40N60FLWG NGTB40N60FLWG

NGTB40N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology40 A, 600 V Low Switching Loss R

 3.1. Size:137K  onsemi
 ngtb40n60fl2wg.pdf

NGTB40N60FLWG NGTB40N60FLWG

NGTB40N60FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softhttp://

 3.2. Size:137K  onsemi
 ngtb40n60fl2.pdf

NGTB40N60FLWG NGTB40N60FLWG

NGTB40N60FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softhttp://

 5.1. Size:182K  onsemi
 ngtb40n60ihlwg.pdf

NGTB40N60FLWG NGTB40N60FLWG

NGTB40N60IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pa

 5.2. Size:135K  onsemi
 ngtb40n60l2.pdf

NGTB40N60FLWG NGTB40N60FLWG

NGTB40N60L2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C40 A, 600 V

 5.3. Size:135K  onsemi
 ngtb40n60l2wg.pdf

NGTB40N60FLWG NGTB40N60FLWG

NGTB40N60L2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C40 A, 600 V

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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