NGTB40N60FLWG Specs and Replacement
Type Designator: NGTB40N60FLWG
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 257 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
tr ⓘ - Rise Time, typ: 37 nS
Coesⓘ - Output Capacitance, typ: 170 pF
Package: TO247
NGTB40N60FLWG Substitution - IGBT ⓘ Cross-Reference Search
NGTB40N60FLWG datasheet
ngtb40n60flwg.pdf
NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology 40 A, 600 V Low Switching Loss R... See More ⇒
ngtb40n60fl2wg.pdf
NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http //... See More ⇒
ngtb40n60fl2.pdf
NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http //... See More ⇒
ngtb40n60ihlwg.pdf
NGTB40N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pa... See More ⇒
Specs: NGTB50N60S , NGTB50N60SWG , IGW40N65H5 , IGP40N65F5 , IGP40N65H5 , IGW40N65F5 , IKP40N65F5 , IKW40N65F5 , FGL60N100BNTD , STGW15S120DF3 , STGW20IH125DF , STGWA15S120DF3 , STGWT20IH125DF , SML75HB06 , MMG50H120X6TN , MMG50S120B6TN , MMG50W120XB6TN .
Keywords - NGTB40N60FLWG transistor spec
NGTB40N60FLWG cross reference
NGTB40N60FLWG equivalent finder
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NGTB40N60FLWG substitution
NGTB40N60FLWG replacement
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