NGTB30N120L PDF and Equivalents Search

 

NGTB30N120L Specs and Replacement

Type Designator: NGTB30N120L

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 260 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 245 pF

Package: TO247

 NGTB30N120L Substitution

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NGTB30N120L datasheet

 ..1. Size:176K  onsemi
 ngtb30n120l.pdf pdf_icon

NGTB30N120L

NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device ... See More ⇒

 0.1. Size:176K  onsemi
 ngtb30n120lwg.pdf pdf_icon

NGTB30N120L

NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device ... See More ⇒

 0.2. Size:102K  onsemi
 ngtb30n120l2wg.pdf pdf_icon

NGTB30N120L

NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast... See More ⇒

 0.3. Size:102K  onsemi
 ngtb30n120l2.pdf pdf_icon

NGTB30N120L

NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast... See More ⇒

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Specs: STGW15S120DF3 , STGW20IH125DF , STGWA15S120DF3 , STGWT20IH125DF , SML75HB06 , MMG50H120X6TN , MMG50S120B6TN , MMG50W120XB6TN , IRG4PF50W , NGTB30N120LWG , NGTB40N120L , NGTB40N120LWG , STGB30H60DLFB , STGB30V60DF , STGB30V60F , STGP30V60DF , STGP30V60F .

History: TGAN40N65F2DS | NGTB30N60FLWG | STGB18N40LZ | RJH60D7BDPQ-E0

Keywords - NGTB30N120L transistor spec

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