NGTB30N120L Datasheet and Replacement
Type Designator: NGTB30N120L
Type: IGBT + Anti-Parallel Diode
Marking Code: 30N120L
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 260 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 245 pF
Qg ⓘ - Total Gate Charge, typ: 420 nC
Package: TO247
NGTB30N120L substitution
NGTB30N120L Datasheet (PDF)
ngtb30n120l.pdf
NGTB30N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications. Offeringboth low on-state voltage and minimal switching loss, the IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device
ngtb30n120lwg.pdf
NGTB30N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications. Offeringboth low on-state voltage and minimal switching loss, the IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device
ngtb30n120l2wg.pdf
NGTB30N120L2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor motor driver applications. Incorporated into the device is a soft andfast
ngtb30n120l2.pdf
NGTB30N120L2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor motor driver applications. Incorporated into the device is a soft andfast
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MG50J1BS11 | F3L150R12W2H3-B11 | IRGP4062D-EPBF | APTGS75X170E3
Keywords - NGTB30N120L transistor datasheet
NGTB30N120L cross reference
NGTB30N120L equivalent finder
NGTB30N120L lookup
NGTB30N120L substitution
NGTB30N120L replacement
History: MG50J1BS11 | F3L150R12W2H3-B11 | IRGP4062D-EPBF | APTGS75X170E3
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