NGTB40N120LWG PDF and Equivalents Search

 

NGTB40N120LWG Specs and Replacement

Type Designator: NGTB40N120LWG

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 260 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 245 pF

Package: TO247

 NGTB40N120LWG Substitution

- IGBT ⓘ Cross-Reference Search

 

NGTB40N120LWG datasheet

 ..1. Size:176K  onsemi
ngtb40n120lwg.pdf pdf_icon

NGTB40N120LWG

NGTB40N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device ... See More ⇒

 3.1. Size:176K  onsemi
ngtb40n120l.pdf pdf_icon

NGTB40N120LWG

NGTB40N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device ... See More ⇒

 3.2. Size:155K  onsemi
ngtb40n120l3wg.pdf pdf_icon

NGTB40N120LWG

NGTB40N120L3WG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is www.onsem... See More ⇒

 4.1. Size:145K  onsemi
ngtb40n120fl2wg.pdf pdf_icon

NGTB40N120LWG

NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on... See More ⇒

Specs: STGWT20IH125DF , SML75HB06 , MMG50H120X6TN , MMG50S120B6TN , MMG50W120XB6TN , NGTB30N120L , NGTB30N120LWG , NGTB40N120L , TGAN40N60FD , STGB30H60DLFB , STGB30V60DF , STGB30V60F , STGP30V60DF , STGP30V60F , STGW15H120DF2 , STGW15H120F2 , STGW20H65FB .

History: SIGC03T60SNC | TT025N120EQ | YGW50N65F1A | VS-GB150LH120N | STGW50HF60SD | STGWA40H65FB

Keywords - NGTB40N120LWG transistor spec

 NGTB40N120LWG cross reference
 NGTB40N120LWG equivalent finder
 NGTB40N120LWG lookup
 NGTB40N120LWG substitution
 NGTB40N120LWG replacement

 

 

 

 

↑ Back to Top
.