STGB30V60DF PDF and Equivalents Search

 

STGB30V60DF Specs and Replacement

Type Designator: STGB30V60DF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 260 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Coesⓘ - Output Capacitance, typ: 120 pF

Package: TO263

 STGB30V60DF Substitution

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STGB30V60DF datasheet

 ..1. Size:1911K  st
stgb30v60df stgp30v60df stgw30v60df stgwt30v60df.pdf pdf_icon

STGB30V60DF

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off 3 3 2 1 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 D PAK TO-220 Tight parameters distribution TAB Safe paralleling Low therma... See More ⇒

 ..2. Size:1905K  st
stgb30v60df.pdf pdf_icon

STGB30V60DF

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off 3 3 2 1 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 D PAK TO-220 Tight parameters distribution TAB Safe paralleling Low therma... See More ⇒

 5.1. Size:1448K  st
stgb30v60f.pdf pdf_icon

STGB30V60DF

STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB Tail-less switching off TAB VCE(sat) = 1.85 V (typ.) @ IC = 30 A Tight parameters distribution Safe paralleling 3 3 1 2 1 Low thermal resistance D2PAK TO-220 Applications Ph... See More ⇒

 8.1. Size:386K  st
stgb30nc60k.pdf pdf_icon

STGB30V60DF

STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s 3 3 2 Applications 1 1 D PAK TO-220 High frequency inverters Motor drivers Description This IGBT utilizes the advanced PowerMESH process resulting in an ... See More ⇒

Specs: MMG50H120X6TN , MMG50S120B6TN , MMG50W120XB6TN , NGTB30N120L , NGTB30N120LWG , NGTB40N120L , NGTB40N120LWG , STGB30H60DLFB , KGF75N65KDF , STGB30V60F , STGP30V60DF , STGP30V60F , STGW15H120DF2 , STGW15H120F2 , STGW20H65FB , STGW30H60DF , STGW30H60DFB .

History: ISL9V5045S3ST-F085

Keywords - STGB30V60DF transistor spec

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