All IGBT. STGW30H60DLFB Datasheet

 

STGW30H60DLFB Datasheet and Replacement


   Type Designator: STGW30H60DLFB
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 101 pF
   Package: TO247
 

 STGW30H60DLFB substitution

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STGW30H60DLFB Datasheet (PDF)

 ..1. Size:1739K  st
 stgb30h60dlfb stgw30h60dlfb.pdf pdf_icon

STGW30H60DLFB

STGB30H60DLFB, STGW30H60DLFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current313 VCE(sat) = 1.55 V (typ.) @ IC = 30 A2D2PAK 1 Low VF soft recovery co-packaged diodeT

 ..2. Size:1739K  st
 stgw30h60dlfb.pdf pdf_icon

STGW30H60DLFB

STGB30H60DLFB, STGW30H60DLFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current313 VCE(sat) = 1.55 V (typ.) @ IC = 30 A2D2PAK 1 Low VF soft recovery co-packaged diodeT

 4.1. Size:1945K  st
 stgw30h60df.pdf pdf_icon

STGW30H60DLFB

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

 4.2. Size:419K  st
 stgw30h60dfb.pdf pdf_icon

STGW30H60DLFB

STGW30H60DFB, STGWT30H60DFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 1.55 V (typ.) @ IC = 30 A3322 Tight parameters distribution11TO-247 Safe parallelingTO-3P Low thermal resist

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Datasheet: STGB30V60F , STGP30V60DF , STGP30V60F , STGW15H120DF2 , STGW15H120F2 , STGW20H65FB , STGW30H60DF , STGW30H60DFB , RJP63K2DPP-M0 , STGW30H65FB , STGW30V60DF , STGW30V60F , STGWA15H120DF2 , STGWA15H120F2 , STGWT20H65FB , STGWT30H60DFB , STGWT30H65FB .

History: AMPBW50N65E

Keywords - STGW30H60DLFB transistor datasheet

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