All IGBT. STGW30H60DLFB Datasheet

 

STGW30H60DLFB IGBT. Datasheet pdf. Equivalent


   Type Designator: STGW30H60DLFB
   Type: IGBT + Anti-Parallel Diode
   Marking Code: GW30H60DLFB
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 101 pF
   Qgⓘ - Total Gate Charge, typ: 149 nC
   Package: TO247

 STGW30H60DLFB Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGW30H60DLFB Datasheet (PDF)

 ..1. Size:1739K  st
 stgb30h60dlfb stgw30h60dlfb.pdf

STGW30H60DLFB STGW30H60DLFB

STGB30H60DLFB, STGW30H60DLFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current313 VCE(sat) = 1.55 V (typ.) @ IC = 30 A2D2PAK 1 Low VF soft recovery co-packaged diodeT

 ..2. Size:1739K  st
 stgw30h60dlfb.pdf

STGW30H60DLFB STGW30H60DLFB

STGB30H60DLFB, STGW30H60DLFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current313 VCE(sat) = 1.55 V (typ.) @ IC = 30 A2D2PAK 1 Low VF soft recovery co-packaged diodeT

 4.1. Size:1945K  st
 stgw30h60df.pdf

STGW30H60DLFB STGW30H60DLFB

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

 4.2. Size:419K  st
 stgw30h60dfb.pdf

STGW30H60DLFB STGW30H60DLFB

STGW30H60DFB, STGWT30H60DFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 1.55 V (typ.) @ IC = 30 A3322 Tight parameters distribution11TO-247 Safe parallelingTO-3P Low thermal resist

 4.3. Size:1944K  st
 stgb30h60df stgf30h60df stgp30h60df stgw30h60df.pdf

STGW30H60DLFB STGW30H60DLFB

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

 4.4. Size:698K  st
 stgw30h60dfb stgwa30h60dfb stgwt30h60dfb.pdf

STGW30H60DLFB STGW30H60DLFB

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 ATAB Tight parameter distribution Safe para

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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