All IGBT. STGWT30V60DF Datasheet

 

STGWT30V60DF IGBT. Datasheet pdf. Equivalent


   Type Designator: STGWT30V60DF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: GWT30V60DF
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 260
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 30
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.15
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 16
   Collector Capacity (Cc), typ, pF: 120
   Total Gate Charge (Qg), typ, nC: 163
   Package: TO3P

 STGWT30V60DF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGWT30V60DF Datasheet (PDF)

 ..1. Size:1911K  st
 stgb30v60df stgp30v60df stgw30v60df stgwt30v60df.pdf

STGWT30V60DF STGWT30V60DF

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma

 ..2. Size:1905K  st
 stgwt30v60df.pdf

STGWT30V60DF STGWT30V60DF

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma

 4.1. Size:1472K  st
 stgwt30v60f.pdf

STGWT30V60DF STGWT30V60DF

STGFW30V60F, STGW30V60F, STGWT30V60FTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A21TO-3PF Tight parameters distributionTab Safe paralleling Low thermal resistance3 322App

 7.1. Size:1635K  st
 stgwt30h65fb.pdf

STGWT30V60DF STGWT30V60DF

STGFW30H65FB, STGW30H65FB, STGWT30H65FBTrench gate field-stop IGBT, HB series 650 V, 30 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 30 ATO-3PF Tight parameters distribution111 Safe paralleling3 Low t

 7.2. Size:537K  st
 stgwt30hp65fb.pdf

STGWT30V60DF STGWT30V60DF

STGWT30HP65FBDatasheetTrench gate field-stop 650 V, 30 A high speed HB series IGBTFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current32 Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A1TO-3P Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficientC

 7.3. Size:698K  st
 stgw30h60dfb stgwa30h60dfb stgwt30h60dfb.pdf

STGWT30V60DF STGWT30V60DF

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 ATAB Tight parameter distribution Safe para

 7.4. Size:419K  st
 stgwt30h60dfb.pdf

STGWT30V60DF STGWT30V60DF

STGW30H60DFB, STGWT30H60DFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 1.55 V (typ.) @ IC = 30 A3322 Tight parameters distribution11TO-247 Safe parallelingTO-3P Low thermal resist

Datasheet: STGW30H65FB , STGW30V60DF , STGW30V60F , STGWA15H120DF2 , STGWA15H120F2 , STGWT20H65FB , STGWT30H60DFB , STGWT30H65FB , IXGH60N60 , STGWT30V60F , RJP60F5DPK , IRGP4650D , IGW50N65F5A , IGW50N65H5A , IKW50N65F5A , IKW50N65H5A , MM30G120B .

 

 
Back to Top