1MBI50U4F-120L-50 PDF and Equivalents Search

 

1MBI50U4F-120L-50 Specs and Replacement

Type Designator: 1MBI50U4F-120L-50

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 275 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Package: MODULE

 1MBI50U4F-120L-50 Substitution

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1MBI50U4F-120L-50 datasheet

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1MBI50U4F-120L-50

http //www.fujielectric.com/products/semiconductor/ 1MBI50U4F-120L-50 IGBT Modules IGBT MODULE (U series) 1200V / 50A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings... See More ⇒

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1MBI50U4F-120L-50

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1MBI50U4F-120L-50

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒

Specs: RJP60F5DPK , IRGP4650D , IGW50N65F5A , IGW50N65H5A , IKW50N65F5A , IKW50N65H5A , MM30G120B , IRGP4750D , BT40T60ANF , KGF30N135NDH , IRGP4078D , NGTB15N120IH , NGTB15N120IHWG , IHW50N65R5 , IKW50N65WR5 , STGB40V60F , STGP40V60F .

History: 1MBI900V-120-50 | 2MBI400TB-060

Keywords - 1MBI50U4F-120L-50 transistor spec

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