All IGBT. 1MBI50U4F-120L-50 Datasheet

 

1MBI50U4F-120L-50 Datasheet and Replacement


   Type Designator: 1MBI50U4F-120L-50
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 275 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 100 nS
   Package: MODULE
 

 1MBI50U4F-120L-50 substitution

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1MBI50U4F-120L-50 Datasheet (PDF)

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1MBI50U4F-120L-50

http://www.fujielectric.com/products/semiconductor/1MBI50U4F-120L-50 IGBT ModulesIGBT MODULE (U series)1200V / 50A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratings

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1MBI50U4F-120L-50

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1MBI50U4F-120L-50

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Datasheet: RJP60F5DPK , IRGP4650D , IGW50N65F5A , IGW50N65H5A , IKW50N65F5A , IKW50N65H5A , MM30G120B , IRGP4750D , IRG7IC28U , KGF30N135NDH , IRGP4078D , NGTB15N120IH , NGTB15N120IHWG , IHW50N65R5 , IKW50N65WR5 , STGB40V60F , STGP40V60F .

Keywords - 1MBI50U4F-120L-50 transistor datasheet

 1MBI50U4F-120L-50 cross reference
 1MBI50U4F-120L-50 equivalent finder
 1MBI50U4F-120L-50 lookup
 1MBI50U4F-120L-50 substitution
 1MBI50U4F-120L-50 replacement

 

 
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