1MBI50U4F-120L-50 IGBT. Datasheet pdf. Equivalent
Type Designator: 1MBI50U4F-120L-50
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 275 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.5 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 100 nS
Qgⓘ - Total Gate Charge, typ: 100 nC
Package: MODULE
1MBI50U4F-120L-50 Transistor Equivalent Substitute - IGBT Cross-Reference Search
1MBI50U4F-120L-50 Datasheet (PDF)
1mbi50u4f-120l-50.pdf
http://www.fujielectric.com/products/semiconductor/1MBI50U4F-120L-50 IGBT ModulesIGBT MODULE (U series)1200V / 50A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratings
1mbi50fe-060.pdf
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Datasheet: RJP60F5DPK , IRGP4650D , IGW50N65F5A , IGW50N65H5A , IKW50N65F5A , IKW50N65H5A , MM30G120B , IRGP4750D , IHW20N120R3 , KGF30N135NDH , IRGP4078D , NGTB15N120IH , NGTB15N120IHWG , IHW50N65R5 , IKW50N65WR5 , STGB40V60F , STGP40V60F .
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