All IGBT. STGWT40V60DF Datasheet

 

STGWT40V60DF IGBT. Datasheet pdf. Equivalent


   Type Designator: STGWT40V60DF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: GWT40V60DF
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 283 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Qgⓘ - Total Gate Charge, typ: 226 nC
   Package: TO3P

 STGWT40V60DF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGWT40V60DF Datasheet (PDF)

 ..1. Size:1828K  st
 stgwt40v60df.pdf

STGWT40V60DF STGWT40V60DF

STGFW40V60DF, STGW40V60DF, STGWT40V60DFTrench gate field-stop IGBT, V series 600 V, 40 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.8 V (typ.) @ IC = 40 A21 Tight parameters distributionTABTO-3PF Safe paralleling Low thermal resistance Very fast

 ..2. Size:1294K  st
 stgfw40v60df stgw40v60df stgwt40v60df.pdf

STGWT40V60DF STGWT40V60DF

STGFW40V60DF, STGW40V60DF, STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J Tail-less switching off V = 1.8 V (typ.) @ I = 40 A CE(sat) C Tight parameters distribution Safe paralleling Low thermal resistance Very fast soft recovery

 3.1. Size:1275K  st
 stgwt40v60dlf.pdf

STGWT40V60DF STGWT40V60DF

STGW40V60DLF, STGWT40V60DLFTrench gate field-stop IGBT, V series 600 V, 40 A very high speedDatasheet - production dataFeatures Designed for soft commutation onlyTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.8 V (typ.) @ IC = 40 A Tight parameters distribution3231 Safe paralleling21 Low thermal resis

 7.1. Size:903K  1
 stgwt40hp65fb.pdf

STGWT40V60DF STGWT40V60DF

STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features TAB Maximum junction temperature: T = 175 C J Minimized tail current V = 1.6 V (typ.) @ I = 40 A CE(sat) C Tight parameter distribution Co-packed diode for protection 3 Safe paralleling 21 Low thermal resistance TO-3PApplica

 7.2. Size:1516K  st
 stgwt40h65dfb.pdf

STGWT40V60DF STGWT40V60DF

STGW40H65DFB STGWT40H65DFBTrench gate field-stop IGBT, HB series 650 V, 40 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Very low saturation voltage: VCE(sat) = 1.60 V (typ.) @ IC = 40 A3322 Tight parameters distribution11 Safe paralleling

 7.3. Size:1485K  st
 stgwt40h60dlfb.pdf

STGWT40V60DF STGWT40V60DF

STGW40H60DLFB, STGWT40H60DLFBTrench gate field-stop IGBT, HB series 600 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A323 Tight parameters distribution12 Safe paralleling1 L

 7.4. Size:1573K  st
 stgwt40h65fb.pdf

STGWT40V60DF STGWT40V60DF

STGW40H65FB, STGFW40H65FB, STGWT40H65FBTrench gate field-stop IGBT, HB series 650 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 High speed switching series3 Minimized tail current21 Very low saturation voltage: VCE(sat) = 1.6 V TABTO-3PF(typ.) @ IC = 40 A Tight parameters distribution

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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