All IGBT. RJH1CV6DPK Datasheet

 

RJH1CV6DPK Datasheet and Replacement


   Type Designator: RJH1CV6DPK
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 33 nS
   Coesⓘ - Output Capacitance, typ: 85 pF
   Package: TO3P
 

 RJH1CV6DPK substitution

   - IGBT ⓘ Cross-Reference Search

 

RJH1CV6DPK Datasheet (PDF)

 ..1. Size:127K  renesas
rjh1cv6dpk.pdf pdf_icon

RJH1CV6DPK

Preliminary Datasheet RJH1CV6DPK R07DS0747EJ03001200V - 30A - IGBT Rev.3.00Application: Inverter Feb 14, 2013Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wafer

 5.1. Size:53K  renesas
r07ds0524ej rjh1cv6dpq.pdf pdf_icon

RJH1CV6DPK

Preliminary DatasheetRJH1CV6DPQ-E0 R07DS0524EJ03001200 V - 30 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

 5.2. Size:98K  renesas
rjh1cv6dpq-e0.pdf pdf_icon

RJH1CV6DPK

Preliminary Datasheet RJH1CV6DPQ-E0 R07DS0524EJ05001200V - 30A - IGBT Rev.5.00Application: Inverter Jun 12, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa

 8.1. Size:98K  renesas
rjh1cv7dpq-e0.pdf pdf_icon

RJH1CV6DPK

Preliminary Datasheet RJH1CV7DPQ-E0 R07DS0525EJ05001200V - 35A - IGBT Rev.5.00Application: Inverter May 24, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wa

Datasheet: STGWT40H65FB , STGWT40V60DF , STGWT40V60DLF , STGW50HF65SD , STGWT50HF65SD , IHW20N120R5 , IHW20N135R5 , MM60G60B , IKW30N60H3 , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , NGTG15N120FL2WG , NGTB60N60S , NGTB60N60SWG , AP50G60SW , IRGP4263 .

History: AOK40B120H1 | BG150B12LY2-I | NGB15N41A | LEGM75BE120L5H | AOB20B65M1 | JNG40T65HYU1 | MIXA80W1200TEH

Keywords - RJH1CV6DPK transistor datasheet

 RJH1CV6DPK cross reference
 RJH1CV6DPK equivalent finder
 RJH1CV6DPK lookup
 RJH1CV6DPK substitution
 RJH1CV6DPK replacement

 

 
Back to Top

 


 
.