NGTB60N60SWG PDF and Equivalents Search

 

NGTB60N60SWG Specs and Replacement

Type Designator: NGTB60N60SWG

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 119 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 48 nS

Coesⓘ - Output Capacitance, typ: 169 pF

Package: TO247

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NGTB60N60SWG datasheet

 ..1. Size:97K  onsemi
 ngtb60n60swg.pdf pdf_icon

NGTB60N60SWG

NGTB60N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack... See More ⇒

 4.1. Size:97K  onsemi
 ngtb60n60s.pdf pdf_icon

NGTB60N60SWG

NGTB60N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack... See More ⇒

Specs: IHW20N135R5 , MM60G60B , RJH1CV6DPK , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , NGTG15N120FL2WG , NGTB60N60S , IRGP4066D , AP50G60SW , IRGP4263 , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 , NGTB35N65FL2WG .

History: NGD18N45CLBT4G | SGP13N60UF

Keywords - NGTB60N60SWG transistor spec

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