NGTB60N60SWG Datasheet and Replacement
Type Designator: NGTB60N60SWG
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 119 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 48 nS
Coesⓘ - Output Capacitance, typ: 169 pF
Package: TO247
NGTB60N60SWG substitution
NGTB60N60SWG Datasheet (PDF)
ngtb60n60swg.pdf
NGTB60N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack
ngtb60n60s.pdf
NGTB60N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack
Datasheet: IHW20N135R5 , MM60G60B , RJH1CV6DPK , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , NGTG15N120FL2WG , NGTB60N60S , JT075N065WED , AP50G60SW , IRGP4263 , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 , NGTB35N65FL2WG .
History: F3L400R07ME4_B22 | HGTP7N60A4 | CM1200HC-66H | CM150RX-24S | CRG15T60A83L | CM200EXS-34SA | APT33GF120BR
Keywords - NGTB60N60SWG transistor datasheet
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History: F3L400R07ME4_B22 | HGTP7N60A4 | CM1200HC-66H | CM150RX-24S | CRG15T60A83L | CM200EXS-34SA | APT33GF120BR
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