NGTB60N60SWG IGBT. Datasheet pdf. Equivalent
Type Designator: NGTB60N60SWG
Marking Code: 60N60S
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 119
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 2
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 60
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 48
Maximum Collector Capacity (Cc), pF: 169
Package: TO247
NGTB60N60SWG Transistor Equivalent Substitute - IGBT Cross-Reference Search
NGTB60N60SWG PDF doc:
1.1. ngtb60n60s.pdf 
Size:97K _igbt
NGTB60N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack
1.2. ngtb60n60swg.pdf Size:97K _igbt
NGTB60N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack
Datasheet: IHW20N135R5 , MM60G60B , RJH1CV6DPK , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , NGTG15N120FL2WG , NGTB60N60S , SGP10N60A , AP50G60SW , IRGP4263 , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 , NGTB35N65FL2WG .
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