MMG50HB120H6HN IGBT. Datasheet pdf. Equivalent
Type Designator: MMG50HB120H6HN
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 40 nS
Qgⓘ - Total Gate Charge, typ: 230 nC
Package: MODULE
MMG50HB120H6HN Transistor Equivalent Substitute - IGBT Cross-Reference Search
MMG50HB120H6HN Datasheet (PDF)
mmg50hb120h6hn.pdf
MMG50HB120H6HN1200V 50A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching
mmg50hb120h6un.pdf
MMG50HB120H6UN 1200V 50A Four-Pack Module February 2012 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg50h120x6tn.pdf
MMG50H120X6TN1200V 50A Six-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT3 Trench+Field Stop technology)Diode Chip(Emcon3 wheeling diode) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated
mmg50h060xb6en.pdf
MMG50H060XB6EN600V 50A PIM ModuleJanuary 2017 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration 600V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copp
mmg50hd120xt6tc.pdf
MMG50HD120XT6TC1200V 50A Rectifier+Inverter ModuleAugust 2018 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insu
mmg50h120x6hn.pdf
MMG50H120X6HN1200V 50A Six-Pack ModuleJune 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(T4 Fast Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper baseplate and soldering
mmg50h120h6hn.pdf
MMG50H120H6HN1200V 50A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching l
mmg50hd120xb6t4n.pdf
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mmg50h120x6tc.pdf
MMG50H120X6TC1200V 50A Six-Pack ModuleMay 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba
mmg50hd120xb6tc.pdf
MMG50HD120XB6TC1200V 50A PIM ModuleAugust 2018 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper bas
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