All IGBT. MMG50HB120H6HN Datasheet

 

MMG50HB120H6HN Datasheet and Replacement


   Type Designator: MMG50HB120H6HN
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 40 nS
   Qgⓘ - Total Gate Charge, typ: 230 nC
   Package: MODULE
      - IGBT Cross-Reference

 

MMG50HB120H6HN Datasheet (PDF)

 ..1. Size:227K  macmic
mmg50hb120h6hn.pdf pdf_icon

MMG50HB120H6HN

MMG50HB120H6HN1200V 50A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching

 2.1. Size:318K  macmic
mmg50hb120h6un.pdf pdf_icon

MMG50HB120H6HN

MMG50HB120H6UN 1200V 50A Four-Pack Module February 2012 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

 8.1. Size:246K  macmic
mmg50h120x6tn.pdf pdf_icon

MMG50HB120H6HN

MMG50H120X6TN1200V 50A Six-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT3 Trench+Field Stop technology)Diode Chip(Emcon3 wheeling diode) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated

 8.2. Size:1058K  macmic
mmg50h060xb6en.pdf pdf_icon

MMG50HB120H6HN

MMG50H060XB6EN600V 50A PIM ModuleJanuary 2017 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration 600V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copp

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MWI60-06G6K | FGW30N120H

Keywords - MMG50HB120H6HN transistor datasheet

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