NGTB40N65IHL2WG Datasheet and Replacement
Type Designator: NGTB40N65IHL2WG
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
Coesⓘ - Output Capacitance, typ: 130 pF
Package: TO247
- IGBT Cross-Reference
NGTB40N65IHL2WG Datasheet (PDF)
ngtb40n65ihl2wg.pdf

NGTB40N65IHL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-p
ngtb40n65ihl2.pdf

NGTB40N65IHL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-p
ngtb40n65fl2.pdf

NGTB40N65FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softhttp://
ngtb40n65fl2wg.pdf

DATA SHEETwww.onsemi.comIGBT - Field Stop II40 A, 650 VVCEsat = 1.7 VNGTB40N65FL2WGEoff = 0.44 mJThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorCperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor
Datasheet: IRGP4263 , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 , NGTB35N65FL2WG , NGTB40N65IHL2 , IHW40T60 , NGTB45N60S1 , NGTB45N60S1WG , NGTB45N60S2 , NGTB45N60S2WG , NGTG35N65FL2 , NGTG35N65FL2WG , RJH60D7BDPQ-E0 , RJH60D7DPQ-E0 .
History: 1MBI400NP-120 | IXST35N120B | VS-70MT060WHTAPBF | MSG100D350FHS | IRG4BC40WS | MSG20T65HPT1 | MSG40T120FQC
Keywords - NGTB40N65IHL2WG transistor datasheet
NGTB40N65IHL2WG cross reference
NGTB40N65IHL2WG equivalent finder
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NGTB40N65IHL2WG substitution
NGTB40N65IHL2WG replacement
History: 1MBI400NP-120 | IXST35N120B | VS-70MT060WHTAPBF | MSG100D350FHS | IRG4BC40WS | MSG20T65HPT1 | MSG40T120FQC



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