All IGBT. HGTG12N60A4D Datasheet

 

HGTG12N60A4D IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG12N60A4D

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Collector Current |Ic|, A: 54

Maximum Junction Temperature (Tj), °C: 150

Package: TO247

HGTG12N60A4D Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTG12N60A4D IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG12N60A4D

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Collector Current |Ic|, A: 54

Maximum Junction Temperature (Tj), °C: 150

Package: TO247

HGTG12N60A4D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTG12N60A4D Datasheet (PDF)

0.1. hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf Size:173K _fairchild_semi

HGTG12N60A4D
HGTG12N60A4D

HGTG12N60A4D, HGTP12N60A4D,HGT1S12N60A4DSData Sheet December 2001600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12AThe HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9AHGT1S12N60A4DS are MOS gated high voltage switching

3.1. hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf Size:207K _fairchild_semi

HGTG12N60A4D
HGTG12N60A4D

HGTP12N60A4, HGTG12N60A4,HGT1S12N60A4S9AData Sheet August 2003600V, SMPS Series N-Channel IGBTs FeaturesThe HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12AHGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9Adevices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These devices ha

 5.1. hgtg12n60c3d.pdf Size:120K _fairchild_semi

HGTG12N60A4D
HGTG12N60A4D

HGTG12N60C3DData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oCThe HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oCdevice combining the best features of MOSFETs and bipolar Short Circuit Ratingtransistors. The device has t

5.2. hgtg12n60c3d .pdf Size:102K _harris_semi

HGTG12N60A4D
HGTG12N60A4D

S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeJanuary 1997Features Package 24A, 600V at TC = 25oCJEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MO

 5.3. hgtg12n60d1d.pdf Size:46K _harris_semi

HGTG12N60A4D
HGTG12N60A4D

S E M I C O N D U C T O R HGTG12N60D1D12A, 600V N-Channel IGBTwith Anti-Parallel Ultrafast DiodeApril 1995Features PackageJEDEC STYLE TO-247 12A, 600V Latch Free OperationEMITTERCOLLECTOR Typical Fall Time

5.4. hgtg12n60c3d.pdf Size:106K _harris_semi

HGTG12N60A4D
HGTG12N60A4D

S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeAugust 1995Features Package 24A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MOS gated high voltage swit

Datasheet: HGTD8P50G1 , HGTD8P50G1S , HGTD8P50G1S9A , HGTG10N120BN , HGTG10N120BND , HGTG11N120CN , HGTG11N120CND , HGTG12N60A4 , GT15N101 , HGTG12N60B3D , HGTG12N60C3D , HGTG12N60C3DR , HGTG18N120BN , HGTG18N120BND , HGTG20N120CN , HGTG20N120CND , HGTG20N120E2 .

 

 
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