All IGBT. STGW25M120DF3 Datasheet

 

STGW25M120DF3 Datasheet and Replacement


   Type Designator: STGW25M120DF3
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G25M120DF3
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 180 pF
   Qgⓘ - Total Gate Charge, typ: 85 nC
   Package: TO247
      - IGBT Cross-Reference

 

STGW25M120DF3 Datasheet (PDF)

 ..1. Size:1046K  st
stgw25m120df3.pdf pdf_icon

STGW25M120DF3

STGW25M120DF3 STGWA25M120DF3Trench gate field-stop IGBT, M series 1200 V, 25 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 8.1. Size:952K  st
stgw25h120f2.pdf pdf_icon

STGW25M120DF3

STGW25H120F2, STGWA25H120F2Trench gate field-stop IGBT, H series 1200 V, 25 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 32 2 TJ=150 C1 1 Tight parameters distribution

 8.2. Size:698K  st
stgw25s120df3.pdf pdf_icon

STGW25M120DF3

STGW25S120DF3, STGWA25S120DF3Trench gate field-stop IGBT, S series 1200 V, 25 A low dropDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 25 A Tight parameter distribution Safer paralleling Low thermal resistance32 Soft and fast recovery antiparallel diode1TO-247ApplicationsTO-247 long le

 8.3. Size:732K  st
stgw25h120df2.pdf pdf_icon

STGW25M120DF3

STGW25H120DF2, STGWA25H120DF2Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247

Datasheet: IRG7PG42UD , IRG7PH44K10D , MMG50S170B6EN , NGTB40N120FL , NGTB40N120FLWG , RJH1CV7DPK , IRGP4760 , IRGP4760D , GT60N321 , STGWA25M120DF3 , NGTB30N120IHL , NGTB30N120IHLWG , NGTB40N120IHL , NGTB40N120IHLWG , IRGP4063D1 , IRGP4660D , IRGP6660D .

History: AOTF5B65M2

Keywords - STGW25M120DF3 transistor datasheet

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