HGTG12N60C3D IGBT. Datasheet pdf. Equivalent
Type Designator: HGTG12N60C3D
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 104
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 2
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 24
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 14
Package: TO247
HGTG12N60C3D Transistor Equivalent Substitute - IGBT Cross-Reference Search
HGTG12N60C3D IGBT. Datasheet pdf. Equivalent
Type Designator: HGTG12N60C3D
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 104
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 2
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 24
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 14
Package: TO247
HGTG12N60C3D Transistor Equivalent Substitute - IGBT Cross-Reference Search
HGTG12N60C3D Datasheet (PDF)
0.1. hgtg12n60c3d.pdf Size:120K _fairchild_semi
HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching • Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar • Short Circuit Rating transistors. The device has t
0.2. hgtg12n60c3d .pdf Size:102K _harris_semi
S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 24A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC E C • Short Circuit Rating G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MO
0.3. hgtg12n60c3d.pdf Size:106K _harris_semi
S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package • 24A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 210ns at TJ = +150oC E C • Short Circuit Rating G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage swit
Datasheet: HGTD8P50G1S9A , HGTG10N120BN , HGTG10N120BND , HGTG11N120CN , HGTG11N120CND , HGTG12N60A4 , HGTG12N60A4D , HGTG12N60B3D , 10N40C1D , HGTG12N60C3DR , HGTG18N120BN , HGTG18N120BND , HGTG20N120CN , HGTG20N120CND , HGTG20N120E2 , HGTG20N60A4 , HGTG20N60A4D .



LIST
Last Update
IGBT: MGD622 | GT50N324 | BT60N60ANF | 2PG011 | MBQ40T65FDSC | IGF40T120F | FGPF30N45TTU | FGH40T65SHDF_F155 | IXBT15N170 | IXBH9N160 |