All IGBT. IHW30N135R3 Datasheet

 

IHW30N135R3 Datasheet and Replacement


   Type Designator: IHW30N135R3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 349 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 67 pF
   Package: TO247
 

 IHW30N135R3 substitution

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IHW30N135R3 Datasheet (PDF)

 ..1. Size:1984K  infineon
ihw30n135r3.pdf pdf_icon

IHW30N135R3

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N135R3Data sheetIndustrial Power ControlIHW30N135R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Offers new higher breakdown voltage to 1350V for improvedreliability Powerful monolithic body diode with low forward voltagedesigned for soft commu

 4.1. Size:1768K  infineon
ihw30n135r5.pdf pdf_icon

IHW30N135R3

IHW30N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive

 7.1. Size:1646K  infineon
ihw30n110r3 1 2.pdf pdf_icon

IHW30N135R3

IGBTReverse conducting IGBT with monolithic body diodeIHW30N110R31100V TRENCHSTOPTM IH-Series for Soft Switching ApplicationsData sheetIndustrial & MultimarketIHW30N110R3TRENCHSTOPTM IH-Series for Soft Switching ApplicationsReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation

 7.2. Size:324K  infineon
ihw30n100r.pdf pdf_icon

IHW30N135R3

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175C GE Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature st

Datasheet: NGTB20N120IH , NGTB20N120IHWG , MMG150H160UX6TN , MMG75H120X6TN , MMG75S120B6TN , MMG75W120X6TN , MMG75W120XB6TN , IHW30N120R3 , GT30J127 , IRG8P50N120KD , MMG100HB060H6EN , MMG50HB120H6UN , KGF40N120KDA , KGF75N60KDB , NGTB15N135IHR , MMG50J120U , STGW60H65DF .

Keywords - IHW30N135R3 transistor datasheet

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