IHW30N135R3 IGBT. Datasheet pdf. Equivalent

Type Designator: IHW30N135R3

Marking Code: H30R1353

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 349

Maximum Collector-Emitter Voltage |Vce|, V: 1350

Collector-Emitter saturation Voltage |Vcesat|, V: 1.65

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 60

Maximum Junction Temperature (Tj), °C: 175

Maximum Collector Capacity (Cc), pF: 67

Package: TO247

IHW30N135R3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IHW30N135R3 Datasheet (PDF)

1.1. ihw30n135r3.pdf Size:1984K _igbt_a

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N135R3 Data sheet Industrial Power Control IHW30N135R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features: • Offers new higher breakdown voltage to 1350V for improved reliability • Powerful monolithic body diode with low forward voltage designed for soft commu

3.1. ihw30n110r3 1 2.pdf Size:1646K _infineon

IGBT Reverse conducting IGBT with monolithic body diode IHW30N110R3 1100V TRENCHSTOPTM IH-Series for Soft Switching Applications Data sheet Industrial & Multimarket IHW30N110R3 TRENCHSTOPTM IH-Series for Soft Switching Applications Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only

3.2. ihw30n100t rev2 7.pdf Size:313K _infineon

IHW30N100T Soft Switching Series q ® Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C • 1.1V Forward voltage of antiparallel rectifier diode • Specified for TJmax = 175°C ® • TrenchStop and Fieldstop technology for 1000 V applications G E offers : - very tight parameter distribution - high ruggedness, temperature sta

 3.3. ihw30n100r rev2 2.pdf Size:324K _infineon

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C G E • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavio

3.4. ihw30n120r2 rev1 5g.pdf Size:360K _infineon

IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages ® • TrenchStop and Fieldstop technology for 1200 V applications G E offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology

 3.5. ihw30n160r2 rev2 1g.pdf Size:391K _infineon

IHW30N160R2 Soft Switching Series TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode C Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers : G E - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT t

3.6. ihw30n120r2.pdf Size:579K _igbt_a

 IHW30N120R2 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with very low forward voltage • Body diode clamps negative voltages TM • TrenchStop and Fieldstop technology for 1200V applications G E offers : - very tight parameter distribution - high ruggedness, temperature stable behavior â€

3.7. ihw30n100r.pdf Size:324K _igbt_a

 IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C G E • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature st

3.8. ihw30n120r3.pdf Size:1983K _igbt_a

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N120R3 Data sheet Industrial Power Control IHW30N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TRENCHSTOPTM technology offering: - very tight parameter d

3.9. ihw30n110r3.pdf Size:2166K _igbt_a

Induction Heating Series Reverse conducting IGBT with monolithic body diode IHW30N110R3 Data sheet Industrial Power Control IHW30N110R3 Induction Heating Series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • Very tight parameter distribution • High ruggedness, tempe

3.10. ihw30n100t.pdf Size:313K _igbt_a

 IHW30N100T Soft Switching Series q ® Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C • 1.1V Forward voltage of antiparallel rectifier diode • Specified for TJmax = 175°C ® • TrenchStop and Fieldstop technology for 1000 V applications G E offers : - very tight parameter distribution - high ruggedness, tem

3.11. ihw30n160r2.pdf Size:391K _igbt_a

 IHW30N160R2 Soft Switching Series TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode C Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers : G E - very tight parameter distribution - high ruggedness, temperature stable behavior

Datasheet: NGTB20N120IH , NGTB20N120IHWG , MMG150H160UX6TN , MMG75H120X6TN , MMG75S120B6TN , MMG75W120X6TN , MMG75W120XB6TN , IHW30N120R3 , 10N40F1D , IRG8P50N120KD , MMG100HB060H6EN , MMG50HB120H6UN , KGF40N120KDA , KGF75N60KDB , NGTB15N135IHR , MMG50J120U , STGW60H65DF .

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