STGW60H65DRF Datasheet. Specs and Replacement

Type Designator: STGW60H65DRF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 360 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 33 nS

Coesⓘ - Output Capacitance, typ: 275 pF

Package: TO247

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STGW60H65DRF datasheet

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STGW60H65DRF

STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode Datasheet - production data Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High switching frequency converters 3 2 1 Description TO-247 This device is an IGBT developed using an advanced proprietary trench gate and field stop structure... See More ⇒

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STGW60H65DRF

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 3 3 2 2 VCE(sat) = 1.6 V (typ.) @ IC = 60 A 1 1 TO-3P TO-247 Tight parameters distribution Safe paralleling ... See More ⇒

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STGW60H65DRF

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 60 A TAB Tight parameter distribution Safe paral... See More ⇒

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STGW60H65DRF

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Specs: IRG8P50N120KD, MMG100HB060H6EN, MMG50HB120H6UN, KGF40N120KDA, KGF75N60KDB, NGTB15N135IHR, MMG50J120U, STGW60H65DF, FGA60N65SMD, NGTB40N60FL2, NGTB40N60FL2WG, NGTB40N65FL2, MMG75S060B6EN, STGW25H120DF2, STGW25H120F2, STGW25S120DF3, STGW28IH125DF

Keywords - STGW60H65DRF transistor spec

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