All IGBT. NGTB40N120IHR Datasheet

 

NGTB40N120IHR Datasheet and Replacement


   Type Designator: NGTB40N120IHR
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 192 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 124 pF
   Package: TO247
 

 NGTB40N120IHR substitution

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NGTB40N120IHR Datasheet (PDF)

 ..1. Size:181K  onsemi
 ngtb40n120ihr.pdf pdf_icon

NGTB40N120IHR

NGTB40N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 0.1. Size:177K  onsemi
 ngtb40n120ihrwg.pdf pdf_icon

NGTB40N120IHR

NGTB40N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 2.1. Size:160K  onsemi
 ngtb40n120ihl.pdf pdf_icon

NGTB40N120IHR

NGTB40N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.2. Size:160K  onsemi
 ngtb40n120ihlwg.pdf pdf_icon

NGTB40N120IHR

NGTB40N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SKM150GAL12V

Keywords - NGTB40N120IHR transistor datasheet

 NGTB40N120IHR cross reference
 NGTB40N120IHR equivalent finder
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 NGTB40N120IHR replacement

 

 
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