All IGBT. NGTB20N135IHR Datasheet

 

NGTB20N135IHR Datasheet and Replacement


   Type Designator: NGTB20N135IHR
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 197 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 124 pF
   Package: TO247
      - IGBT Cross-Reference

 

NGTB20N135IHR Datasheet (PDF)

 ..1. Size:183K  onsemi
 ngtb20n135ihr.pdf pdf_icon

NGTB20N135IHR

NGTB20N135IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 0.1. Size:183K  onsemi
 ngtb20n135ihrwg.pdf pdf_icon

NGTB20N135IHR

NGTB20N135IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 6.1. Size:174K  onsemi
 ngtb20n120ihl.pdf pdf_icon

NGTB20N135IHR

NGTB20N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 6.2. Size:176K  onsemi
 ngtb20n120lwg.pdf pdf_icon

NGTB20N135IHR

NGTB20N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: BM63364S-VC | IRG4BC20FD-S | APT44GA60SD30C | SMBH1G100US120 | NGTB15N120IHR | 7MBR50VP120-50 | FD400R33KF2C

Keywords - NGTB20N135IHR transistor datasheet

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