All IGBT. NGTB20N135IHR Datasheet

 

NGTB20N135IHR Datasheet and Replacement


   Type Designator: NGTB20N135IHR
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 197 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 124 pF
   Package: TO247
 

 NGTB20N135IHR substitution

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NGTB20N135IHR Datasheet (PDF)

 ..1. Size:183K  onsemi
 ngtb20n135ihr.pdf pdf_icon

NGTB20N135IHR

NGTB20N135IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 0.1. Size:183K  onsemi
 ngtb20n135ihrwg.pdf pdf_icon

NGTB20N135IHR

NGTB20N135IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 6.1. Size:174K  onsemi
 ngtb20n120ihl.pdf pdf_icon

NGTB20N135IHR

NGTB20N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 6.2. Size:176K  onsemi
 ngtb20n120lwg.pdf pdf_icon

NGTB20N135IHR

NGTB20N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

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Datasheet: NGTB40N120IHR , NGTB40N120IHRWG , NGTB25N120FL2 , NGTB25N120FL2WG , NGTB25N120S , NGTB25N120SWG , NGTG25N120FL2 , NGTG25N120FL2WG , IKW50N60H3 , NGTB20N135IHRWG , NGTB30N135IHR , NGTB30N135IHRWG , NGTB40N135IHR , NGTB40N135IHRWG , STGW40H120DF2 , STGW40H120F2 , STGW40M120DF3 .

History: IXGH56N60B3

Keywords - NGTB20N135IHR transistor datasheet

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