NGTB30N135IHR Specs and Replacement
Type Designator: NGTB30N135IHR
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 197 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Coesⓘ - Output Capacitance, typ: 124 pF
Package: TO247
NGTB30N135IHR Substitution
- IGBT ⓘ Cross-Reference Search
NGTB30N135IHR datasheet
..1. Size:182K onsemi
ngtb30n135ihr.pdf 
NGTB30N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on-state voltage with minimal switching losses. The IGBT is well http //onsemi.com suited for resonant or soft switching applicati... See More ⇒
0.1. Size:243K onsemi
ngtb30n135ihrwg.pdf
NGTB30N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on-state voltage with minimal switching losses. The IGBT is well http //onsemi.com suited for resonant or soft switching applicati... See More ⇒
6.1. Size:176K onsemi
ngtb30n120lwg.pdf
NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device ... See More ⇒
6.2. Size:102K onsemi
ngtb30n120l2wg.pdf
NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast... See More ⇒
6.3. Size:180K onsemi
ngtb30n120ihr.pdf
NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli... See More ⇒
6.4. Size:149K onsemi
ngtb30n120fl2.pdf
NGTB30N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http /... See More ⇒
6.5. Size:180K onsemi
ngtb30n120ihrwg.pdf
NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli... See More ⇒
6.6. Size:149K onsemi
ngtb30n120fl2wg.pdf
NGTB30N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http /... See More ⇒
6.7. Size:161K onsemi
ngtb30n120ihlwg.pdf
NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic... See More ⇒
6.8. Size:102K onsemi
ngtb30n120l2.pdf
NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast... See More ⇒
6.9. Size:172K onsemi
ngtb30n120ihs.pdf
NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic... See More ⇒
6.10. Size:172K onsemi
ngtb30n120ihswg.pdf
NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic... See More ⇒
6.11. Size:176K onsemi
ngtb30n120l.pdf
NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device ... See More ⇒
6.12. Size:161K onsemi
ngtb30n120ihl.pdf
NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic... See More ⇒
Specs: NGTB25N120FL2
, NGTB25N120FL2WG
, NGTB25N120S
, NGTB25N120SWG
, NGTG25N120FL2
, NGTG25N120FL2WG
, NGTB20N135IHR
, NGTB20N135IHRWG
, RJH60F7BDPQ-A0
, NGTB30N135IHRWG
, NGTB40N135IHR
, NGTB40N135IHRWG
, STGW40H120DF2
, STGW40H120F2
, STGW40M120DF3
, STGWA40H120DF2
, STGWA40M120DF3
.
Keywords - NGTB30N135IHR transistor spec
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