All IGBT. MMG100S120B6TN Datasheet

 

MMG100S120B6TN IGBT. Datasheet pdf. Equivalent

Type Designator: MMG100S120B6TN

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 450

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 100

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 30

Package: MODULE

MMG100S120B6TN Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MMG100S120B6TN Datasheet (PDF)

1.1. mmg100s120b6c.pdf Size:294K _igbt

MMG100S120B6TN
MMG100S120B6TN

MMG100S120B6C 1200V 100A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses APPLICATIONS □ High frequency switching ap

1.2. mmg100s120b6tn.pdf Size:293K _igbt

MMG100S120B6TN
MMG100S120B6TN

MMG100S120B6TN 1200V 100A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT3 CHIP(Trench+Field Stop technology) □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses

 1.3. mmg100s120b6un.pdf Size:291K _igbt

MMG100S120B6TN
MMG100S120B6TN

MMG100S120B6UN 1200V 100A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP(1200V NPT technology) □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses APPLICA

1.4. mmg100s120b6hn.pdf Size:420K _igbt

MMG100S120B6TN
MMG100S120B6TN

MMG100S120B6HN 1200V 100A IGBT Module December 2011 PRELIMINARY RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP(Trench+Field Stop technology) □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losse

Datasheet: IRGSL4B60K , NGTB15N60S1 , NGTG15N60S1 , NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , IRG4PC50U , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG .

 
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IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |

 

 

 
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