All IGBT. NGTB30N120FL2WG Datasheet

 

NGTB30N120FL2WG IGBT. Datasheet pdf. Equivalent

Type Designator: NGTB30N120FL2WG

Marking Code: 30N120FL2

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 227

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 30

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 35

Maximum Collector Capacity (Cc), pF: 170

Package: TO247

NGTB30N120FL2WG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTB30N120FL2WG Datasheet (PDF)

1.1. ngtb30n120ihlwg.pdf Size:161K _igbt

NGTB30N120FL2WG
NGTB30N120FL2WG

NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.2. ngtb30n120l2wg.pdf Size:102K _igbt

NGTB30N120FL2WG
NGTB30N120FL2WG

NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast

 1.3. ngtb30n120l.pdf Size:176K _igbt

NGTB30N120FL2WG
NGTB30N120FL2WG

NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

1.4. ngtb30n120ihrwg.pdf Size:180K _igbt

NGTB30N120FL2WG
NGTB30N120FL2WG

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

 1.5. ngtb30n120ihl.pdf Size:161K _igbt

NGTB30N120FL2WG
NGTB30N120FL2WG

NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.6. ngtb30n120l2.pdf Size:102K _igbt

NGTB30N120FL2WG
NGTB30N120FL2WG

NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast

1.7. ngtb30n120fl2wg.pdf Size:149K _igbt

NGTB30N120FL2WG
NGTB30N120FL2WG

NGTB30N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http:/

1.8. ngtb30n120fl2.pdf Size:149K _igbt

NGTB30N120FL2WG
NGTB30N120FL2WG

NGTB30N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http:/

1.9. ngtb30n120ihswg.pdf Size:172K _igbt

NGTB30N120FL2WG
NGTB30N120FL2WG

NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.10. ngtb30n120ihs.pdf Size:172K _igbt

NGTB30N120FL2WG
NGTB30N120FL2WG

NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.11. ngtb30n120lwg.pdf Size:176K _igbt

NGTB30N120FL2WG
NGTB30N120FL2WG

NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

1.12. ngtb30n120ihr.pdf Size:180K _igbt

NGTB30N120FL2WG
NGTB30N120FL2WG

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

Datasheet: MMG100S060B6EN , 50MT060ULSTAPBF , VS-GB70LA60UF , VS-GB70NA60UF , IRGP4266 , MMG100S120B6TN , MMG100W120X6TN , NGTB30N120FL2 , IRG4BC30W , IRGP4690D , IRGP4266D , IRGP4790 , IRGP4790D , MMG75S060B6N , 40MT120UHAPBF , 40MT120UHTAPBF , MMG75H120H6HN .

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