HGTG20N60C3 Specs and Replacement
Type Designator: HGTG20N60C3
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 164 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 45 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 24 nS
Package: TO247
HGTG20N60C3 Substitution
HGTG20N60C3 specs
hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .... See More ⇒
hgtg20n60c3 hgtp20n60c3 hgt1s20n60c3s.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Specs: HGTG18N120BND , HGTG20N120CN , HGTG20N120CND , HGTG20N120E2 , HGTG20N60A4 , HGTG20N60A4D , HGTG20N60B3 , HGTG20N60B3D , NGTB75N65FL2 , HGTG20N60C3D , HGTG20N60C3DR , HGTG20N60C3R , HGTG27N120BN , HGTG27N60C3DR , HGTG27N60C3R , HGTG30N120CN , HGTG30N60A4 .
History: RJH60F5DPQ-A0
Keywords - HGTG20N60C3 transistor spec
HGTG20N60C3 cross reference
HGTG20N60C3 equivalent finder
HGTG20N60C3 lookup
HGTG20N60C3 substitution
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History: RJH60F5DPQ-A0
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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