NGTB50N60L2WG Specs and Replacement
Type Designator: NGTB50N60L2WG
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 48 nS
Coesⓘ - Output Capacitance, typ: 300 pF
Package: TO247
NGTB50N60L2WG Substitution - IGBT ⓘ Cross-Reference Search
NGTB50N60L2WG datasheet
ngtb50n60l2wg.pdf
NGTB50N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 50 A, 600 V ... See More ⇒
ngtb50n60l2.pdf
NGTB50N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 50 A, 600 V ... See More ⇒
ngtb50n60s1wg.pdf
NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com ... See More ⇒
ngtb50n60flwg.pdf
NGTB50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology 50 A, 600 V Low Switching Loss R... See More ⇒
Specs: MMG50SR120FZB , MMG50SR120UA , MMG50SR120UK , MMG50SR120UZA , MMG50SR120UZK , MMG75J120U6HN , MMG75S120B6HN , NGTB50N60L2 , RJP30H1DPD , NGTB75N60FL2 , NGTB75N60FL2WG , NGTB75N60S , NGTB75N60SWG , NGTB75N65FL2 , NGTB75N65FL2WG , MMG200HB060B6EN , MMG200HB060H6EN .
Keywords - NGTB50N60L2WG transistor spec
NGTB50N60L2WG cross reference
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NGTB50N60L2WG replacement
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