NGTB75N60FL2 Specs and Replacement
Type Designator: NGTB75N60FL2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 265 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 48 nS
Coesⓘ - Output Capacitance, typ: 300 pF
Package: TO247
NGTB75N60FL2 Substitution - IGBT ⓘ Cross-Reference Search
NGTB75N60FL2 datasheet
ngtb75n60fl2.pdf
NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 600 V ... See More ⇒
ngtb75n60fl2wg.pdf
NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 600 V ... See More ⇒
ngtb75n60s.pdf
NGTB75N60SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com c... See More ⇒
ngtb75n60swg.pdf
NGTB75N60SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com c... See More ⇒
Specs: MMG50SR120UA , MMG50SR120UK , MMG50SR120UZA , MMG50SR120UZK , MMG75J120U6HN , MMG75S120B6HN , NGTB50N60L2 , NGTB50N60L2WG , BT40T60ANF , NGTB75N60FL2WG , NGTB75N60S , NGTB75N60SWG , NGTB75N65FL2 , NGTB75N65FL2WG , MMG200HB060B6EN , MMG200HB060H6EN , MMG100D170B6EN .
Keywords - NGTB75N60FL2 transistor spec
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