All IGBT. NGTB75N60SWG Datasheet

 

NGTB75N60SWG Datasheet and Replacement


   Type Designator: NGTB75N60SWG
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 75N60S
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 265 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 48 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Qg ⓘ - Total Gate Charge, typ: 310 nC
   Package: TO247
 

 NGTB75N60SWG substitution

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NGTB75N60SWG Datasheet (PDF)

 ..1. Size:88K  onsemi
 ngtb75n60swg.pdf pdf_icon

NGTB75N60SWG

NGTB75N60SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.comc

 4.1. Size:88K  onsemi
 ngtb75n60s.pdf pdf_icon

NGTB75N60SWG

NGTB75N60SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.comc

 5.1. Size:243K  onsemi
 ngtb75n60fl2wg.pdf pdf_icon

NGTB75N60SWG

NGTB75N60FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 600 V

 5.2. Size:243K  onsemi
 ngtb75n60fl2.pdf pdf_icon

NGTB75N60SWG

NGTB75N60FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 600 V

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Datasheet: MMG50SR120UZK , MMG75J120U6HN , MMG75S120B6HN , NGTB50N60L2 , NGTB50N60L2WG , NGTB75N60FL2 , NGTB75N60FL2WG , NGTB75N60S , RJP63F3DPP-M0 , NGTB75N65FL2 , NGTB75N65FL2WG , MMG200HB060B6EN , MMG200HB060H6EN , MMG100D170B6EN , MMG100J120UZ , MMG100SR120B , MMG100SR120DE .

Keywords - NGTB75N60SWG transistor datasheet

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