All IGBT. HGTG27N120BN Datasheet

 

HGTG27N120BN IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG27N120BN

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Collector Current |Ic|, A: 72

Maximum Junction Temperature (Tj), °C: 150

Package: TO247

HGTG27N120BN Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTG27N120BN Datasheet (PDF)

0.1. hgtg27n120bn hgt5a27n120bn.pdf Size:164K _fairchild_semi

HGTG27N120BN
HGTG27N120BN

HGTG27N120BN / HGT5A27N120BNData Sheet October 200472A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG27N120BN and HGT5A27N120BN are Non- 72A, 1200V, TC = 25oCPunch Through (NPT) IGBT design. This is a new member 1200V Switching SOA Capabilityof the MOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 15

9.1. hgtg20n60b3d.pdf Size:176K _fairchild_semi

HGTG27N120BN
HGTG27N120BN

HGTG20N60B3DData Sheet December 200140A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oCThe HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oCswitching device combining the best features of MOSFETs Short Circuit Ratedand bipolar transistors. The device has

9.2. hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Size:140K _fairchild_semi

HGTG27N120BN
HGTG27N120BN

HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .

 9.3. hgtg20n60a4 hgtp20n60a4.pdf Size:136K _fairchild_semi

HGTG27N120BN
HGTG27N120BN

HGTG20N60A4, HGTP20N60A4Data Sheet December 2001600V, SMPS Series N-Channel IGBTs FeaturesThe HGTG20N60A4 and HGTP20N60A4 are MOS gated >100kHz Operation at 390V, 20Ahigh voltage switching devices combining the best features 200kHz Operation at 390V, 12Aof MOSFETs and bipolar transistors. These devices have the 600V Switching SOA Capabilityhigh input impedance of a

9.4. hgtg20n60b3.pdf Size:194K _fairchild_semi

HGTG27N120BN
HGTG27N120BN

HGTG20N60B3Data Sheet October 200440A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTG20N60B3 is a Generation III MOS gated high 40A, 600V at TC = 25oCvoltage switching devices combining the best features of 600V Switching SOA CapabilityMOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oCh

 9.5. hgtg20n60a4d.pdf Size:148K _fairchild_semi

HGTG27N120BN
HGTG27N120BN

HGTG20N60A4DData Sheet February 2009600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation At 390V, 20AThe HGTG20N60A4D is a MOS gated high voltage switching 200kHz Operation At 390V, 12Adevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. This device has the high input impedance o

9.6. hgtg24n6.pdf Size:41K _harris_semi

HGTG27N120BN
HGTG27N120BN

S E M I C O N D U C T O R HGTG24N60D124A, 600V N-Channel IGBTMay 1995Features PackageJEDEC STYLE TO-247 24A, 600VEMITTER Latch Free OperationCOLLECTOR Typical Fall Time

9.7. hgtg20n60c3r.pdf Size:112K _harris_semi

HGTG27N120BN
HGTG27N120BN

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

9.8. hgtg20n6.pdf Size:157K _harris_semi

HGTG27N120BN
HGTG27N120BN

S E M I C O N D U C T O R HGTG20N60B3D40A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeJanuary 1996Features Package 40A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 140ns at +150oCEC Short Circuit RatedG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG20N60B3D is a MOS gated high voltage switching

9.9. hgtg24n60d.pdf Size:15K _harris_semi

HGTG27N120BN

HGTG24N60D1DTypical Performance Curves (Continued)1300TJ = +150oC, TC = +100oC, RGE = 25, L = 500H801200VCE = 480V, VGE = 10V1100VCE = 480V, VGE = 15V1000fMAX1 = 0.05/tD(OFF)IfMAX2 = (PD - PC)/WOFF900PC = DUTY FACTOR = 50%10800RJC = 1.0oC/WVCE = 240V, VGE = 10V700VCE = 240V, VGE = 15V600VCE = 480V, VGE = 10V, 15V500TJ = +150oCVCE = 240V, VG

9.10. hgtg20n1.pdf Size:47K _harris_semi

HGTG27N120BN
HGTG27N120BN

S E M I C O N D U C T O R HGTG20N100D220A, 1000V N-Channel IGBTMay 1995Features PackageJEDEC STYLE TO-247 34A, 1000VEMITTER Latch Free OperationCOLLECTOR Typical Fall Time 520nsGATE High Input Impedance Low Conduction LossCOLLECTOR(BOTTOM SIDEMETAL)DescriptionThe HGTG20N100D2 is a MOS gated high voltage switchingdevice combining the best featur

9.11. hgtg20n120.pdf Size:79K _harris_semi

HGTG27N120BN
HGTG27N120BN

S E M I C O N D U C T O R HGTG20N120E234A, 1200V N-Channel IGBTApril 1995Features PackageJEDEC STYLE TO-247 34A, 1200V Latch Free OperationEMITTER Typical Fall Time - 780ns COLLECTORGATE High Input ImpedanceCOLLECTOR Low Conduction Loss(BOTTOM SIDEMETAL)DescriptionThe HGTG20N120E2 is a MOS gated, high voltage switch-ing device combining the best

9.12. hgtg20n5.pdf Size:41K _harris_semi

HGTG27N120BN
HGTG27N120BN

S E M I C O N D U C T O R HGTG20N50C1D20A, 500V N-Channel IGBTwith Anti-Parallel Ultrafast DiodeApril 1995Features PackageJEDEC STYLE TO-247 20A, 500VEMITTER Latch Free OperationCOLLECTOR Typical Fall Time

Datasheet: HGTG20N60A4 , HGTG20N60A4D , HGTG20N60B3 , HGTG20N60B3D , HGTG20N60C3 , HGTG20N60C3D , HGTG20N60C3DR , HGTG20N60C3R , GT20D101 , HGTG27N60C3DR , HGTG27N60C3R , HGTG30N120CN , HGTG30N60A4 , HGTG30N60A4D , HGTG30N60B3 , HGTG30N60B3D , HGTG30N60C3 .

 

 
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