HGTG27N120BN IGBT. Datasheet pdf. Equivalent

HGTG27N120BN / HGT5A27N120BNData Sheet October 200472A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG27N120BN and HGT5A27N120BN are Non- 72A, 1200V, TC = 25oCPunch Through (NPT) IGBT design. This is a new member 1200V Switching SOA Capabilityof the MOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 15

NPT Series N-Channel IGBT72 A, 1200 VHGTG27N120BNThe HGTG27N120BN is Non-Punch Through (NPT) IGBT design.This is a new member of the MOS gated high voltage switching IGBTfamily. IGBTs combine the best features of MOSFETs and bipolarwww.onsemi.comtransistors. This device has the high input impedance of a MOSFETand the low on-state conduction loss of a bipolar transistor.CThe

HGTG27N60C3DRTMData Sheet June 2000 File Number 4262.154A, 600V, Rugged UFS Series N-Channel FeaturesIGBT with Anti-Parallel Ultrafast Diode 54A, 600V, TC = 25oC[ /TitleThis IGBT was designed for optimum performance in the 600V Switching SOA Capability(HGTdemanding world of motor control operation as well as other Typical Fall Time at TJ = 150oC . . . . . . . . .

S E M I C O N D U C T O R HGTG20N120E234A, 1200V N-Channel IGBTApril 1995Features PackageJEDEC STYLE TO-247 34A, 1200V Latch Free OperationEMITTER Typical Fall Time - 780ns COLLECTORGATE High Input ImpedanceCOLLECTOR Low Conduction Loss(BOTTOM SIDEMETAL)DescriptionThe HGTG20N120E2 is a MOS gated, high voltage switch-ing device combining the best

S E M I C O N D U C T O R HGTG20N60B3D40A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeJanuary 1996Features Package 40A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 140ns at +150oCEC Short Circuit RatedG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG20N60B3D is a MOS gated high voltage switching

HGT1S20N60B3S, HGTP20N60B3,HGTG20N60B3Data Sheet December 200140A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGT1S20N60B3S, the HGTP20N60B3 and the 40A, 600V at TC = 25oCHGTG20N60B3 are Generation III MOS gated high voltage 600V Switching SOA Capabilityswitching devices combining the best features of MOSFETs Typical Fall Time. . . . . . . . . . . . . . . . . . .

HGTP20N60B3,S E M I C O N D U C T O RHGTG20N60B3February 1996 40A, 600V, UFS Series N-Channel IGBTJEDEC TO-220ABFeatures PackageEMITTER COLLECTOR 40A, 600V at TC = +25oCGATE Square Switching SOA CapabilityCOLLECTOR(FLANGE) Typical Fall Time - 140ns at +150oC Short Circuit Rated Low Conduction LossJEDEC STYLE TO-247DescriptionEMITTERThe HGTP20N6

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

HGTG20N60B3DData Sheet December 200140A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oCThe HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oCswitching device combining the best features of MOSFETs Short Circuit Ratedand bipolar transistors. The device has

HGTG20N60A4DData Sheet February 2009600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation At 390V, 20AThe HGTG20N60A4D is a MOS gated high voltage switching 200kHz Operation At 390V, 12Adevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. This device has the high input impedance o

HGTG20N60A4, HGTP20N60A4Data Sheet December 2001600V, SMPS Series N-Channel IGBTs FeaturesThe HGTG20N60A4 and HGTP20N60A4 are MOS gated >100kHz Operation at 390V, 20Ahigh voltage switching devices combining the best features 200kHz Operation at 390V, 12Aof MOSFETs and bipolar transistors. These devices have the 600V Switching SOA Capabilityhigh input impedance of a

HGTG20N60B3Data Sheet October 200440A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTG20N60B3 is a Generation III MOS gated high 40A, 600V at TC = 25oCvoltage switching devices combining the best features of 600V Switching SOA CapabilityMOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oCh

HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

HGTG20N60A4, HGTP20N60A4Data Sheet April 2013 File NumberFeatures600 V SMPS IGBT 40 A, 600 V @ TC = 110CThe HGTG20N60A4 and HGTP20N60A4 are combines the best features of high input impedance of a MOSFET and the Low Saturation Voltage : VCE(sat) = 1.8 V @ IC = 20 Alow on-state conduction loss of a bipolar transistor. This Typical Fall Time............55ns at TJ = 1

S E M I C O N D U C T O R HGTG24N60D124A, 600V N-Channel IGBTMay 1995Features PackageJEDEC STYLE TO-247 24A, 600VEMITTER Latch Free OperationCOLLECTOR Typical Fall Time

S E M I C O N D U C T O R HGTG20N100D220A, 1000V N-Channel IGBTMay 1995Features PackageJEDEC STYLE TO-247 34A, 1000VEMITTER Latch Free OperationCOLLECTOR Typical Fall Time 520nsGATE High Input Impedance Low Conduction LossCOLLECTOR(BOTTOM SIDEMETAL)DescriptionThe HGTG20N100D2 is a MOS gated high voltage switchingdevice combining the best featur

S E M I C O N D U C T O R HGTG20N120E234A, 1200V N-Channel IGBTApril 1995Features PackageJEDEC STYLE TO-247 34A, 1200V Latch Free OperationEMITTER Typical Fall Time - 780ns COLLECTORGATE High Input ImpedanceCOLLECTOR Low Conduction Loss(BOTTOM SIDEMETAL)DescriptionThe HGTG20N120E2 is a MOS gated, high voltage switch-ing device combining the best

HGTG24N60D1DTypical Performance Curves (Continued)1300TJ = +150oC, TC = +100oC, RGE = 25, L = 500H801200VCE = 480V, VGE = 10V1100VCE = 480V, VGE = 15V1000fMAX1 = 0.05/tD(OFF)IfMAX2 = (PD - PC)/WOFF900PC = DUTY FACTOR = 50%10800RJC = 1.0oC/WVCE = 240V, VGE = 10V700VCE = 240V, VGE = 15V600VCE = 480V, VGE = 10V, 15V500TJ = +150oCVCE = 240V, VG

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

S E M I C O N D U C T O R HGTG20N50C1D20A, 500V N-Channel IGBTwith Anti-Parallel Ultrafast DiodeApril 1995Features PackageJEDEC STYLE TO-247 20A, 500VEMITTER Latch Free OperationCOLLECTOR Typical Fall Time

S E M I C O N D U C T O R HGTG20N60B3D40A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeJanuary 1996Features Package 40A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 140ns at +150oCEC Short Circuit RatedG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG20N60B3D is a MOS gated high voltage switching