All IGBT. FF150R17ME3G Datasheet

 

FF150R17ME3G Datasheet and Replacement


   Type Designator: FF150R17ME3G
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1050 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 50 nS
   Package: MODULE
      - IGBT Cross-Reference

 

FF150R17ME3G Datasheet (PDF)

 ..1. Size:479K  infineon
 ff150r17me3g.pdf pdf_icon

FF150R17ME3G

Technische Information / Technical InformationIGBT-ModuleFF150R17ME3GIGBT-modulesEconoDUAL3 Modul mit Trench/Feldstop IGBT und Emitter Controlled3 Diode EconoDUAL3 module with trench/fieldstop IGBT and Emitter Controlled3 diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspa

 6.1. Size:571K  infineon
 ff150r17ke4.pdf pdf_icon

FF150R17ME3G

FF150R17KE462mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled diodeVorlufige Daten / Preliminary DataV = 1700VCESI = 150A / I = 300AC nom CRMPotentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives

 7.1. Size:829K  infineon
 ff150r12ks4 b2.pdf pdf_icon

FF150R17ME3G

/ Technical InformationIGBT-FF150R12KS4_B2IGBT-modules62mm C-Series IGBT62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 150A / I = 300AC nom CRM Typical Applications High Frequency Switching Application

 7.2. Size:622K  infineon
 ff150r12ks4.pdf pdf_icon

FF150R17ME3G

Technische Information / Technical InformationIGBT-ModuleFF150R12KS4IGBT-modules62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Appli

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History: HMG20N65F | IXGT15N120BD1 | STGB30H60DF | 1MBI400HH-120L-50 | IXGH32N60AU1S | IRGPS46160D | GT8N101

Keywords - FF150R17ME3G transistor datasheet

 FF150R17ME3G cross reference
 FF150R17ME3G equivalent finder
 FF150R17ME3G lookup
 FF150R17ME3G substitution
 FF150R17ME3G replacement

 

 
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