HGTG40N60B3 Datasheet. Specs and Replacement

Type Designator: HGTG40N60B3  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 290 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Package: TO247

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HGTG40N60B3 datasheet

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HGTG40N60B3

HGTG40N60B3 Data Sheet November 2004 File Number 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching 70A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. The device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . 100ns at ... See More ⇒

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HGTG40N60B3

S E M I C O N D U C T O R HGTG40N60B3 PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package JEDEC STYLE TO-247 70A, 600V at TC = +25oC E Square Switching SOA Capability C G Typical Fall Time - 160ns at +150oC Short Circuit Rating Low Conduction Loss Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the bes... See More ⇒

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HGTG40N60B3

HGTG40N60C3 Data Sheet January 2000 File Number 4472.2 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching 75A, 600V, TC = 25oC device combining the best features of a MOSFET and a 600V Switching SOA Capability bipolar transistor. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 1... See More ⇒

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HGTG40N60B3

HGTG40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching 75A, 600V, TC = 25oC device combining the best features of a MOSFET and a 600V Switching SOA Capability bipolar transistor. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oC impedance... See More ⇒

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Specs: HGTG30N60A4, HGTG30N60A4D, HGTG30N60B3, HGTG30N60B3D, HGTG30N60C3, HGTG30N60C3D, HGTG34N100E2, HGTG40N60A4, IRG4PF50W, HGTG40N60C3, HGTG40N60C3R, HGTG5N120BND, HGTG5N120CND, HGTG7N60A4, HGTG7N60A4D, HGTH12N40C1, HGTH12N40C1D

Keywords - HGTG40N60B3 transistor spec

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